Conditions for the formation of ring-like distributed stacking faults in CZ-Si wafers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 3 B, 1998, Pages

  Kissinger, Gudrun ^a   Vanhellemont, Jan ^a   Lambert, Ulrich ^a   Graef, Dieter ^a   Grabolla, Thomas ^a   Richter, Hans ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; OXIDATION; PRECIPITATION (CHEMICAL); SEMICONDUCTOR GROWTH; STACKING FAULTS; STRAIN; STRESS ANALYSIS; THERMAL EFFECTS;

INTERSTITIAL EMISSION;

SILICON WAFERS;

EID: 0032025406     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l306     Document Type: Article

References (21)