SCOPUS 정보 검색 플랫폼

Volumn 47-48, Issue , 1996, Pages 97-106

Expected limits for manufacturing very large silicon wafers

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DEFECTS; INDUSTRIAL RESEARCH; SEMICONDUCTOR DEVICE MANUFACTURE; SINGLE CRYSTALS;

GROWTH PROCESS; LARGE DIAMETER; MOST LIKELY; SEMATECH; SILICON SINGLE CRYSTALS; SMALL SCALE; WAFER DIAMETER; WAFER MANUFACTURING;

SILICON WAFERS;

EID: 0344349298 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: None Document Type: Article

Times cited : (1)

References (14)

1
- 84996155990
- W.D. Sylwestrowicz, Phil.Mag. 7, 1825 (1962)
- (1962) Phil.Mag. , vol.7 , pp. 1825
- Sylwestrowicz, W.D.¹

2
- 84902967536
- Nikkei Microdevices, November in Japanese
- in "MOS LSI Price Reduction Scenario Work starts on 12″ Wafer Size Selected for Next Step", Nikkei Microdevices, November 1992, p. 20-53 (in Japanese)
- (1992) MOS LSI Price Reduction Scenario Work Starts on 12″ Wafer Size Selected for next Step , pp. 20-53

3
- 0022097516
- ID slicing technology for large diameters
- R.L. Lane, "ID slicing technology for large diameters", Solid State Technology, Vol. 28, 59 (1985)
- (1985) Solid State Technology , vol.28 , pp. 59
- Lane, R.L.¹

4
- 0013163007
- U S.Patent No. 4,494,523
- R.C. Wells, "Wire Saw", U S.Patent No. 4,494,523 (1985)
- (1985) Wire Saw
- Wells, R.C.¹

5
- 84902958643
- (Solarex Corp.) DOE/JPL 955077-78/3, Jet Propulsion Laboratory, Pasadena, CA
- J.R. Anderson, Second Quaterly Progress Report, (Solarex Corp.) DOE/JPL 955077-78/3, Jet Propulsion Laboratory, Pasadena, CA (1979)
- (1979) Second Quaterly Progress Report
- Anderson, J.R.¹

6
- 0026239071
- October
- T. Abe, Precision Engineering, October 1991, Vol.13 No.4, p. 251
- (1991) Precision Engineering , vol.13 , Issue.4 , pp. 251
- Abe, T.¹

7
- 84902956883
- "Multiple Wafer Free Polishing", Part 1 and 2, Oct.4th
- E.Mendel, J.R.Hause and E.Mendel, J.S.Basi, IBM Technical Report, "Multiple Wafer Free Polishing", Part 1 and 2, Oct.4th 1980
- (1980) IBM Technical Report
- Mendel, E.¹ Hause, J.R.² Mendel, E.³ Basi, J.S.⁴

8
- 84902979368
- German Patent DE 39 31 213 C2, published June 3rd
- W.Lang, F.Kuhn-Kunenfeld, H.A.Gerber, W.Zipf, German Patent DE 39 31 213 C2, published June 3rd 1993
- (1993)
- Lang, W.¹ Kuhn-Kunenfeld, F.² Gerber, H.A.³ Zipf, W.⁴

9
- 84902991781
- to be published
- W.v.Ammon, E.Dornberger, H.Oelkrug, H.Weidner, J.Crystal Growth, 1995, to be published
- (1995) J.Crystal Growth
- Ammon, W.V.¹ Dornberger, E.² Oelkrug, H.³ Weidner, H.⁴

10
- 84902997219
- The Electrochemical Society, to be published
- E.Dornberger, W.v.Ammon, Proceedings of the 187th Meeting, The Electrochemical Society, 1995, to be published
- (1995) Proceedings of the 187th Meeting
- Dornberger, E.¹ Ammon, W.V.²

11
- 0025488686
- F.Dupret, P.Nicodeme, Y.Ryckmans, P.Wouters, M.J.Crochet, Int.J.Heat Mass Transfer, Vol.33, No. 9, 1849 (1990)
- (1990) Int.J.Heat Mass Transfer , vol.33 , Issue.9 , pp. 1849
- Dupret, F.¹ Nicodeme, P.² Ryckmans, Y.³ Wouters, P.⁴ Crochet, M.J.⁵

12
- 0026630810
- H.Yamagishi, I.Fusegawa, N. Fujimaki, M.Katayama, Semicond.Sci.Technol. 7, A135 (1992)
- (1992) Semicond.Sci.Technol. , vol.7
- Yamagishi, H.¹ Fusegawa, I.² Fujimaki, N.³ Katayama, M.⁴

13
- 84902952560
- Technical Conference at SEMICON Europe, Brussels
- M.Hourai, M.Sano, S.Sumita, T.Shigematsu, Proc. of Progress in Semiconductor Fabrication, Technical Conference at SEMICON Europe, Brussels (1993)
- (1993) Proc. of Progress in Semiconductor Fabrication
- Hourai, M.¹ Sano, M.² Sumita, S.³ Shigematsu, T.⁴

14
- 84902991662
- Jap.Patent Application JP 81837/91
- T.Oda, I. Fusegawa, A.Iwasaki, A.Maeda, S.Takeyasu, N.Fujimaki, Y.Karasawa, Jap.Patent Application JP 81837/91 (1991)
- (1991)
- Oda, T.¹ Fusegawa, I.² Iwasaki, A.³ Maeda, A.⁴ Takeyasu, S.⁵ Fujimaki, N.⁶ Karasawa, Y.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.