Structural and optical properties of epitaxially overgrown third-order gratings for InGaN/GaN-based distributed feedback lasers

Applied Physics Letters

Volumn 73, Issue 19, 1998, Pages 2706-2708

  Romano, Linda T ^a   Hofstetter, Daniel ^a   McCluskey, Matthew D ^a   Bour, David P ^a   Kneissl, Michael ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION GRATINGS; ETCHING; HOLOGRAPHY; ION BEAMS; OPTICAL PROPERTIES; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; TRANSMISSION ELECTRON MICROSCOPY;

ION BEAM ETCHING; LASER STRUCTURE; OPTICAL COUPLING COEFFICIENT; THIRD ORDER DIFFRACTION GRATINGS;

DISTRIBUTED FEEDBACK LASERS;

EID: 0032500994     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122565     Document Type: Article

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