Studies of Mg-GaN grown by MBE on GaAs(111)B substrates

MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

  Cheng, T S ^a   Foxon, C T ^a   Jeffs, N J ^a   Dewsnip, D J ^a   Flannery, L ^a   Orton, J W ^a   Novikov, S V ^b   Ber, B Ya ^b   Kudriavtsev, Yu A ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRON MOBILITY; GALLIUM NITRIDE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

DIFFUSION RATE; FILM THICKNESS; SURFACE CONCENTRATION;

SEMICONDUCTOR GROWTH;

EID: 0345916944     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S1092578300001393     Document Type: Article

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