Hole transport across the (Al,Ga)(As,Sb) barrier in InAs-(Al,Ga)(As,Sb) heterostructures

Journal of Applied Physics

Volumn 83, Issue 2, 1998, Pages 894-899

  Brar, Berinder ^a,b   Kroemer, Herbert ^a  

^a University of California   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; FERMI LEVEL; HETEROJUNCTIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON CONCENTRATION; ENERGY BAND DIAGRAM; HALL MEASUREMENTS; THERMIONIC EMISSION; VALENCE BAND BARRIER;

ELECTRON TRANSPORT PROPERTIES;

EID: 0031696455     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366774     Document Type: Article

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