MOCVD growth of AlGaN UV LEDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3419, Issue , 1998, Pages 46-50

  Han, Jung ^a   Crawford, Mary H ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

AlGaN; GaN; Gas phase reaction; Ultraviolet emitter

Indexed keywords

AMMONIA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION;

GAS-PHASE REACTION;

LIGHT EMITTING DIODES;

EID: 0032402926     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.311042     Document Type: Conference Paper

References (17)

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4. 0.92N injection diode grown on (0001) 6H-SiC substrates by low-pressure metal-organic vapor phase epitaxy
5. Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light emitting diodes
6. Radiative recombination lifetime measurements of InGaN single quantum well
7. Recombination dynamics in InGaN quantum wells
8. Optical transition in GaN/AlGaN multiple quantum wells grown by molecular beam epitaxy
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10. The effect of hydrogen on morphology evolution during GaN metalorganic chemical vapor deposition
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12. High temperature adduct formation of trimethylgallium and ammonia
13. 3 and TMGa or TMAl
14. 3