메뉴 건너뛰기




Volumn 27, Issue 8, 1980, Pages 1402-1408

Emitter Effects in Shallow Bipolar Devices: Measurements and Consequences

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS - LARGE SCALE INTEGRATION;

EID: 0019045364     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1980.20048     Document Type: Article
Times cited : (71)

References (15)
  • 1
    • 0017014216 scopus 로고
    • Measurements of bandgap narrowing in Si bipolar transistors
    • J. W. Slotboom and H. C. de Graaf, “Measurements of bandgap narrowing in Si bipolar transistors,” Solid-State Electron., vol. 19, p. 857, 1976.
    • (1976) Solid-State Electron. , vol.19 , pp. 857
    • Slotboom, J.W.1    de Graaf, H.C.2
  • 3
    • 0014725465 scopus 로고
    • A charge control relation for bipolar transistors
    • Jan.
    • H. K. Gummel, “A charge control relation for bipolar transistors,” Bell Syst. Tech. J., vol. 49, pp. 115–120, Jan. 1970.
    • (1970) Bell Syst. Tech. J. , vol.49 , pp. 115-120
    • Gummel, H.K.1
  • 4
    • 3743059127 scopus 로고
    • Modeling of bipolar devices
    • (NATO Advanced Study Institute Series, E-21). Leyden, The Netherlands: Noordhoff
    • W. L. Engl, O. Manck, and A. W. Wieder, “Modeling of bipolar devices,” in Process and Device Modeling for IC-Design (NATO Advanced Study Institute Series, E-21). Leyden, The Netherlands: Noordhoff, 1977.
    • (1977) Process and Device Modeling for IC-Design
    • Engl, W.L.1    Manck, O.2    Wieder, A.W.3
  • 5
    • 0015650473 scopus 로고
    • Auger coefficients for highly doped and highly excited silicon
    • J. Beck and R. Conradt, “Auger coefficients for highly doped and highly excited silicon,” Solid-State Commun., vol. 13, p. 93, 1973.
    • (1973) Solid-State Commun. , vol.13 , pp. 93
    • Beck, J.1    Conradt, R.2
  • 6
    • 84880190601 scopus 로고
    • Auger recombination in Si
    • J. Dziewior and W. Schmidt, “Auger recombination in Si,” Appl. Phys. Lett., vol. 5, p. 346, 1977.
    • (1977) Appl. Phys. Lett. , vol.5 , pp. 346
    • Dziewior, J.1    Schmidt, W.2
  • 8
    • 0016575092 scopus 로고
    • Determination of generation lifetime from the small-signal transient behavior of MOS-capacitors
    • W. Zechnall and W. Werner, “Determination of generation lifetime from the small-signal transient behavior of MOS-capacitors,” Solid-State Electron., vol. 18, pp. 971–976, 1975.
    • (1975) Solid-State Electron. , vol.18 , pp. 971-976
    • Zechnall, W.1    Werner, W.2
  • 10
    • 84939011044 scopus 로고
    • Experimental determination of the minority carrier diffusion constants in highly doped silicon
    • presented at ESSDERC, Montpellier, France
    • J. Dziewior and D. Silber, “Experimental determination of the minority carrier diffusion constants in highly doped silicon,” presented at ESSDERC 1978, Montpellier, France, 1978.
    • (1978)
    • Dziewior, J.1    Silber, D.2
  • 11
    • 0039014466 scopus 로고
    • Fundamental adsorption edge of silicon heavily doped with donors or acceptor impurities
    • A. A. Vol'fson and V. K. Subashiev, “Fundamental adsorption edge of silicon heavily doped with donors or acceptor impurities,” Sov. Phys.-Semicond., vol. 1, pp. 327–332, 1967.
    • (1967) Sov. Phys.-Semicond , vol.1 , pp. 327-332
    • Vol'fson, A.A.1    Subashiev, V.K.2
  • 12
    • 0016539216 scopus 로고
    • Bipolar high-speed low-power gates with double implanted transistors
    • G. Graul, H. Kaiser, W. J. Wilhelm, and H. Ryssel, “Bipolar high-speed low-power gates with double implanted transistors,” IEEE J. Solid-State Circuits, vol. SC-10, p. 201, 1975.
    • (1975) IEEE J. Solid-State Circuits , vol.SC-10 , pp. 201
    • Graul, G.1    Kaiser, H.2    Wilhelm, W.J.3    Ryssel, H.4
  • 13
    • 84939011157 scopus 로고
    • A tunnel model for polysilicon emitters with very high efficiencies
    • presented at ESSDERC Mantpellier, France
    • H. C. de Graaff and J. G. de Grort, “A tunnel model for polysilicon emitters with very high efficiencies,” presented at ESSDERC 1978, Mantpellier, France, 1978.
    • (1978)
    • de Graaff, H.C.1    de Grort, J.G.2
  • 14
    • 84939035184 scopus 로고
    • The lateral pnp-transistor-A new evaluation of influences on current gain
    • (Grenoble. France)
    • H. H. Berger, “The lateral pnp-transistor-A new evaluation of influences on current gain,” in Tech. Dig. European Semiconductor Devices Conf. (Grenoble. France). p. 164. 1975.
    • (1975) Tech. Dig. European Semiconductor Devices Conf. , pp. 164
    • Berger, H.H.1
  • 15
    • 84939068506 scopus 로고
    • Speed limit of thin-epitaxy MTL/I2L
    • presented at the European Solid-State Circuits Conf., Amsterdam, The Netherlands
    • H. H. Berger and K. Helwig, “Speed limit of thin-epitaxy MTL/I2L,” presented at the European Solid-State Circuits Conf., Amsterdam, The Netherlands, 1978.
    • (1978)
    • Berger, H.H.1    Helwig, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.