-
1
-
-
0014735936
-
Low-frequency noise sources in bipolar junction transistors
-
Feb.
-
R. C. Jaegher and A. J. Brodersen, “Low-frequency noise sources in bipolar junction transistors’ IEEE Trans. Electron Devices, vol ED-17, pp. 128–134, Feb. 1970.
-
(1970)
IEEE Trans. Electron Devices
, vol.ED-17
, pp. 128-134
-
-
Jaegher, R.C.1
Brodersen, A.J.2
-
2
-
-
0342499776
-
Low-frequency noise figure and its application to the measurement of certain transistor parameters
-
May
-
J. F. Gibbons, “Low-frequency noise figure and its application to the measurement of certain transistor parameters,” IRE Trans. Electron. Devices, vol. ED-9, pp. 308–315, May 1962.
-
(1962)
IRE Trans. Electron. Devices
, vol.ED-9
, pp. 308-315
-
-
Gibbons, J.F.1
-
3
-
-
84917989906
-
Accurate noise measurements on transistors
-
Mar.
-
E. R. Chenette and A. Van der Ziel, “Accurate noise measurements on transistors,” IRE Trans. Electron Devices, vol. ED-9, pp. 123–128, Mar. 1962.
-
(1962)
IRE Trans. Electron Devices
, vol.ED-9
, pp. 123-128
-
-
Chenette, E.R.1
Van der Ziel, A.2
-
5
-
-
0343137994
-
Power gain of transistors at high frequencies
-
Jan.
-
J. Lindmayer, “Power gain of transistors at high frequencies,” Solid-State Electron., vol. 5, pp. 171–175, Jan. 1962.
-
(1962)
Solid-State Electron.
, vol.5
, pp. 171-175
-
-
Lindmayer, J.1
-
6
-
-
84916459450
-
Design, fabrication and characterization of a germanium microwave transistor
-
Jan.
-
W. E. Beadle, D. E. Dubarlos, and W. E. Eckton, “Design, fabrication and characterization of a germanium microwave transistor,” IEEE Trans. Electron Devices, vol. ED-16, pp. 125–138, Jan. 1969.
-
(1969)
IEEE Trans. Electron Devices
, vol.ED-16
, pp. 125-138
-
-
Beadle, W.E.1
Dubarlos, D.E.2
Eckton, W.E.3
-
7
-
-
0014618477
-
Computer aided determination of transistor model element values
-
F. H. Musa, “Computer aided determination of transistor model element values,” in IEEE WESCON Conv. Rec., 1969.
-
(1969)
IEEE WESCON Conv. Rec.
-
-
Musa, F.H.1
-
8
-
-
84933874051
-
Transistor distortion analysis using Volterra series representation
-
May/June
-
S. Narayanan, “Transistor distortion analysis using Volterra series representation,” Bell Syst. Tech. J., vol. 46, pp. 990–1024, May/June 1967.
-
(1967)
Bell Syst. Tech. J.
, vol.46
, pp. 990-1024
-
-
Narayanan, S.1
-
9
-
-
33749888299
-
Signal processes in transistor mixer circuits at high frequencies
-
Nov.
-
R. G. Meyer, “Signal processes in transistor mixer circuits at high frequencies,” Proc. Inst. Elec. Eng. (London), vol. 114, pp. 1605–1612, Nov. 1967.
-
(1967)
Proc. Inst. Elec. Eng. (London)
, vol.114
, pp. 1605-1612
-
-
Meyer, R.G.1
-
10
-
-
0014927884
-
A simplified approach to noise in microwave transistors
-
May
-
S. D. Malaviya and A. Van der Ziel, “A simplified approach to noise in microwave transistors,” Solid-State Electron., vol. 13, 1511–1518, May 1970.
-
(1970)
Solid-State Electron.
, vol.13
, pp. 1511-1518
-
-
Malaviya, S.D.1
Van der Ziel, A.2
-
11
-
-
84915154569
-
Noise in high-gain transistors and its application to the measurement of certain transistor parameters
-
July
-
S. T. Hsu, “Noise in high-gain transistors and its application to the measurement of certain transistor parameters,” IEEE Trans. Electron. Devices, vol. ED-18, pp. 425–431, July 1971.
-
(1971)
IEEE Trans. Electron. Devices
, vol.ED-18
, pp. 425-431
-
-
Hsu, S.T.1
-
12
-
-
0015052119
-
Characterization and modeling for statistical design
-
Apr.
-
J. Logan, “Characterization and modeling for statistical design,” Bell Syst. Tech. J., vol. 50, pp. 1105–1147, Apr. 1971.
-
(1971)
Bell Syst. Tech. J.
, vol.50
, pp. 1105-1147
-
-
Logan, J.1
-
13
-
-
0342774446
-
Elementary circuit properties of transistors
-
New York: Wiley, sec. 3.2.
-
C. L. Searle et al., “Elementary circuit properties of transistors,” Semiconductor Electron. Educ. Comm., vol. 3. New York: Wiley, 1964, sec. 3.2.
-
(1964)
Semiconductor Electron. Educ. Comm.
, vol.3
-
-
Searle, C.L.1
-
14
-
-
84938005917
-
A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device
-
Oct.
-
H. N. Ghosh, “A distributed model of the junction transistor and its application in the prediction of the emitter-base diode characteristic, base impedance, and pulse response of the device,” IEEE Trans. Electron Devices, vol. ED-12, pp. 513–531, Oct. 1965.
-
(1965)
IEEE Trans. Electron Devices
, vol.ED-12
, pp. 513-531
-
-
Ghosh, H.N.1
-
15
-
-
84946965182
-
Measurement of the high frequency base resistance and collector capacitance of drift transistors
-
F. J. Hyde and T. E. Price, “Measurement of the high frequency base resistance and collector capacitance of drift transistors,” J. Electron. Contr., vol. 6, pp. 347–355, 1959.
-
(1959)
J. Electron. Contr.
, vol.6
, pp. 347-355
-
-
Hyde, F.J.1
Price, T.E.2
-
16
-
-
84946965337
-
Transient analysis and device characterization of A. C. P. circuits
-
July
-
K. G. Ashar et. al., “Transient analysis and device characterization of A. C. P. circuits,” IBM J. Res. Develop., vol. 7, pp. 207–223, July 1963.
-
(1963)
IBM J. Res. Develop.
, vol.7
, pp. 207-223
-
-
Ashar, K.G.1
-
17
-
-
84914993144
-
Determination of the physical parameters of transistors of signal-and doubled-diffused structure
-
May
-
A. R. Boothroyd and F. N. Trofimenkoff, “Determination of the physical parameters of transistors of signal-and doubled-diffused structure,” IEEE Trans. Electron Devices, vol. ED-10, pp. 149–163, May 1963.
-
(1963)
IEEE Trans. Electron Devices
, vol.ED-10
, pp. 149-163
-
-
Boothroyd, A.R.1
Trofimenkoff, F.N.2
-
18
-
-
0004267341
-
Fundamentals of Semiconductor Devices
-
Princeton, N. J.: Van Nostrand, sect. 3.6.
-
J. Lindmayer and C. Y. Wrigley, Fundamentals of Semiconductor Devices. Princeton, N. J.: Van Nostrand, 1965, sect. 3.6.
-
(1965)
-
-
Lindmayer, J.1
Wrigley, C.Y.2
-
19
-
-
84930556056
-
The noise performance of microwave transistors
-
Mar.
-
H. Fukui, “The noise performance of microwave transistors,” IEEE Trans. Electron Devices, vol. ED-13, pp. 329–341, Mar. 1966.
-
(1966)
IEEE Trans. Electron Devices
, vol.ED-13
, pp. 329-341
-
-
Fukui, H.1
-
20
-
-
84946967368
-
Transistor base resistance
-
Mar.
-
L. von Biljon, “Transistor base resistance,” Electron. Technol. (USSR), pp. 108–115, Mar. 1962.
-
(1962)
Electron. Technol. (USSR)
, pp. 108-115
-
-
von Biljon, L.1
-
21
-
-
5844393390
-
Integrated Circuits
-
New York: McGraw-Hill, ch. 4.
-
R. M. Warner and J. N. Fordemwalt, Integrated Circuits. New York: McGraw-Hill, 1965, ch. 4.
-
(1965)
-
-
Warner, R.M.1
Fordemwalt, J.N.2
-
22
-
-
0002818770
-
Accurate measurement of emitter and collector series resistances in transistors
-
Jan.
-
B. Kulke and S. L. Miller, “Accurate measurement of emitter and collector series resistances in transistors,” Proc. IRE (Lett.), vol. 45, p. 90, Jan. 1957.
-
(1957)
Proc. IRE (Lett.)
, vol.45
, pp. 90
-
-
Kulke, B.1
Miller, S.L.2
-
23
-
-
0041675191
-
Measurement of emitter and collector series resistance
-
May
-
L. J. Giacoletto, “Measurement of emitter and collector series resistance,” IEEE Trans. Electron Devices, vol. ED-19, pp. 692–693, May 1972.
-
(1972)
IEEE Trans. Electron Devices
, vol.ED-19
, pp. 692-693
-
-
Giacoletto, L.J.1
|