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Volumn 31, Issue 4, 1984, Pages 409-412

Method for Determining the Emitter and Base Series Resistances of Bipolar Transistors

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, BIPOLAR;

EID: 0021406709     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21541     Document Type: Article
Times cited : (126)

References (16)
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    • (1979) IEEE J. Solid-State Circuits , vol.SC-14 , pp. 679-684
    • Tang, D.D.1    Solomon, P.M.2
  • 3
    • 0016542423 scopus 로고
    • High-performance transistors with arsenic-implanted polysilicon emitters
    • J. Graul, A. Glasl, and H. Murrmann, “High-performance transistors with arsenic-implanted polysilicon emitters,” IEEE J. Solid-State Circuits, vol. SC-11, pp. 491-495,1976.
    • (1976) IEEE J. Solid-State Circuits, vol. SC-11 , pp. 491-495
    • Graul, J.1    Glasl, A.2    Murrmann, H.3
  • 4
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    • Effect of emitter contact on current gain of silicon bipolar transistors
    • T. H. Ning and R. D. Isaac, “Effect of emitter contact on current gain of silicon bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-27, pp. 2051–2055, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , pp. 2051-2055
    • Ning, T.H.1    Isaac, R.D.2
  • 5
    • 0018545806 scopus 로고
    • The SIS tunnel emitter: A theory for emitters with thin interface layers
    • H. C. de Graff and J. G. de Groot, “The SIS tunnel emitter: A theory for emitters with thin interface layers,” IEEE Trans. Electron Devices, vol. ED-26, pp. 1771–1776, 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 1771-1776
    • de Graff, H.C.1    de Groot, J.G.2
  • 6
    • 84937350085 scopus 로고
    • Large-signal behavior of junction transistors
    • J. J. Ebers and J. L. Moll, “Large-signal behavior of junction transistors,” Proc. IRE, vol. 42, pp. 1761–1772, 1954.
    • (1954) Proc. IRE , vol.42 , pp. 1761-1772
    • Ebers, J.J.1    Moll, J.L.2
  • 7
    • 0019876225 scopus 로고
    • New technique for determination of static emitter and collector series resistances of bipolar transistors
    • W. Filensky and H. Beneking, “New technique for determination of static emitter and collector series resistances of bipolar transistors,” Electron. Lett., vol. 17, pp. 503–504, 1981.
    • (1981) Electron. Lett. , vol.17 , pp. 503-504
    • Filensky, W.1    Beneking, H.2
  • 8
    • 0015490526 scopus 로고
    • Characterization and measurement of the base and emitter resistances of bipolar transistors
    • W.M.C. Sansen and R. G. Meyer, “Characterization and measurement of the base and emitter resistances of bipolar transistors,” IEEE J. Solid-State Circuits, vol. SC-7, pp. 492–498, 1972.
    • (1972) IEEE J. Solid-State Circuits , vol.SC-7 , pp. 492-498
    • Sansen, W.M.C.1    Meyer, R.G.2
  • 9
    • 0015052119 scopus 로고
    • Characterization and modeling for statistical design
    • J. Logan, “Characterization and modeling for statistical design,” Bell Syst. Tech. J., vol. 50, pp. 1105–1147, 1971.
    • (1971) Bell Syst. Tech. J. , vol.50 , pp. 1105-1147
    • Logan, J.1
  • 10
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    • Measurement of emitter and collector series resistances
    • L. J. Giacoletto, “Measurement of emitter and collector series resistances,” IEEE Trans. Electron Devices, vol. ED-19, pp. 692-693,1972.
    • (1972) IEEE Trans. Electron Devices , vol.ED-19 , pp. 692-693
    • Giacoletto, L.J.1
  • 13
    • 0018996594 scopus 로고
    • Heavy doping effects in p-n-p bipolar transistors
    • D. D. Tang, “Heavy doping effects in p-n-p bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-27, pp. 563–570, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , pp. 563-570
    • Tang, D.D.1
  • 16
    • 0020245428 scopus 로고
    • The influence of surface treatments on the electrical characteristics of polysilicon emitter bipolar transistors
    • B. Soerowirdjo, P. Ashburn, and A. Cuthbertson, “The influence of surface treatments on the electrical characteristics of polysilicon emitter bipolar transistors,” in IEDM Tech. Dig., pp. 668–671, 1982.
    • (1982) IEDM Tech. Dig. , pp. 668-671
    • Soerowirdjo, B.1    Ashburn, P.2    Cuthbertson, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.