The Hooge Parameters of n+-p-n and p+-n-p Silicon Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 32, Issue 3, 1985, Pages 658-661

  Zhu, Xichen ^a   Van Der Ziel, Aldert ^b  

^a KUNMING INSTITUTE OF PHYSICS   (China)

^b UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS - DIFFUSION; SEMICONDUCTING SILICON - APPLICATIONS;

EMITTER-BASE SPACE-CHARGE REGION; HOOGE PARAMETERS; MOBILITY AND DIFFUSION FLUCTUATIONS; SILICON BIPOLAR TRANSISTORS; SURFACE RECOMBINATION;

TRANSISTORS, BIPOLAR;

EID: 0022024794     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.21994     Document Type: Article

References (11)

1. F. N. Hooge, “1/f noise is no surface effect,” Phys. Lett., vol. A-29, p. 139, 1969; also “1/f noise,” Physica B, vol. 83, p. 14, 1976
2. T. G. M. Kleinpenning, “1/f noise in p-n diodes,” Physica B, vol. 98, p. 289, 1980
3. A. van der Ziel, “Proposed discrimination between 1/ f noise sources in transistors,” Solid-State Electron., vol. 25, p. 141, 1982
4. in Solid State Physical Electronics. 3rd ed., p. 322, equation (15.39)
5. W. H. Fonger, in Transistors I, RCA Laboratory, Princeton, NY, 1956
6. J. Kilmer, A. van der Ziel, and G. Bosman, “Presence of mobility fluctuation 1/ f noise identified in silicon p+-n-p transistors,” Solid-State Electron., vol. 26, p. 71, 1983
7. J. Kilmer, A. van der Ziel, and G. Bosman, “Mobility fluctuation 1/ f noise in silicon p+-n-p transistors,” Solid-State Electron., to be published.
8. X. C. Zhu, A. Pawlikiewicz, and A. van der Ziel, “1/f noise in n+-p-n p-n microwave transistors,” Solid-State Electron., to be published.
9. K. H. Duh and A. van der Ziel, “Hooge parameters for various FET structures,” IEEE Trans. Electron Devices, this issue, pp. 662–666
10. A. van der Ziel, P. H. Handel, X. C. Zhu, and K. H. Duh, “A theory of the Hooge parameters of solid-state devices,” IEEE Trans. Electron Devices, this issue, pp. 667–671
11. F. N. Hooge and L. K. J. Vandamme, “Lattice scattering causes 1/ f noise,” Phys. Lett., vol. 66A, p. 315, 1978