A single-electron device and circuit simulator

Superlattices and Microstructures

Volumn 21, Issue 1, 1997, Pages 37-42

  Wasshuber, Christoph ^a   Kosina, Hans ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Monte carlo; Simulation; Single electron; Tunneling

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRON DEVICES; ELECTRON TUNNELING; FREE ENERGY; MONTE CARLO METHODS; NETWORKS (CIRCUITS); PIECEWISE LINEAR TECHNIQUES; TUNNEL JUNCTIONS;

CONSTANT VOLTAGE SOURCES; PIECEWISE LINEAR TIME DEPENDENT VOLTAGE SOURCES; STATIONARY SIMULATION MODE; TRANSIENT SIMULATION MODE; VOLTAGE CONTROLLED VOLTAGE SOURCES;

SIMULATORS;

EID: 0030871562     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0138     Document Type: Article

References (7)

1. H. Grabert, G.-L. Ingold, M. H. Devoret, D. Estève, H. Pothier and C. Urbina, Zeitschrift für Physik B-Condensed Matter 84, 143 (1991).
2. M. H. Devoret and H. Grabert, in H. Grabert and M. H. Devoret, eds, Single Charge Tunneling - Coulomb Blockade Phenomena in Nanostructures, Plenum Press and NATO Scientific Affairs Division, New York: pp. 1-19 (1992).
3. M. Kirihara, N. Kuwamura, K. Taniguchi and C. Hamaguchi, in Extended Abstracts of the International Conference on Solid State Devices and Materials, Yokohama: pp. 328-330 (1994).
4. K. K. Likharev, IBM J. Research Develop. 32, 144 (1988).
5. H. Fukui, M. Fujishima and K. Hoh. Japanese J. Appl. Phys. 34, 1345 (1995).
6. D. V. Averin and Y. V. Nazarov, in Single Charge Tunneling - Coulomb Blockade Phenomena in Nano-structures, H. Grabert and M. H. Devoret, eds, Plenum Press and NATO Scientific Affairs Division, New York: pp. 217-247 (1992).
7. L. J. Geerligs, D. V. Averin and J. E. Mooij, Phys. Rev. Lett. 65, 3037 (1990).