Microdefects in polycrystalline silicon

Solid State Phenomena

Volumn 51-52, Issue , 1996, Pages 81-86

  Werner, M ^a   Weber, E R ^b   Mc Hugo, S ^b   Chapman, K L ^c  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Iron; Microdefects; Multicrystalline Silicon; Precipitation; Transmission Electron Microscopy (TEM)

Indexed keywords

EID: 0344003065     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.51-52.81     Document Type: Article

References (5)

1. See, e.g.,S. Narayanan, S.R. Wenham and M.A. Green, IEEE Trans. Electron Dev. ED-37, 382 (1990).
2. J. Bailey, J.P. Kalejs and C. Keaveny: Proc.1st World Conf. Photovoltaic Energ.Conversion, (IEEE) Publishing Services, New York, 1994), p. 1356
3. D. Gilles, E.R. Weber and S. Hahn, Phys. Rev. Lett. 64, 196 (1990).
4. S.A. McHugo and W.D. Sawyer, Appl. Phys. Lett. 62, 2519 (1993).
5. K.L. Chapman, M. Werner and E.R. Weber, unpubl.