Characterization of shallow implants with SIMS using electron-beam-assisted oxygen bombardment with oxygen backfill

Surface and Interface Analysis

Volumn 26, Issue 11, 1998, Pages 851-860

  Puga Lambers, M ^a   Holloway, P H ^a,b  

^a UNIVERSITY OF FLORIDA   (United States)

^b University of Florida   (United States)

Author keywords

Electron beam irradiation; Electron beam stimulated oxidation; Oxygen backfill; Shallow implants; SIMS

Indexed keywords

ELECTRON BEAMS; ION BOMBARDMENT; ION IMPLANTATION; OXIDATION; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SILICON; SUBSTRATES;

ELECTRON-BEAM-ASSISTED OXYGEN BOMBARDMENT; OXYGEN BACKFILL;

SURFACE CHEMISTRY;

EID: 0032181041     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199810)26:11<851::AID-SIA442>3.0.CO;2-M     Document Type: Article

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