Improved sensitivity and depth resolution for analyses of shallow p-n junctions in silicon with secondary ion mass spectrometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 353-357

  Erickson, Jon W ^a   Brigham, R ^a  

^a CHARLES EVANS AND ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003617539     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588474     Document Type: Article

References (8)

1. (a) W. Vandervorst and F. R. Shepherd, J. Vac. Sci. Technol. A 5, 313 (1987);
2. (b) W. Vandervorst, J. Alay, B. Brijs, W. De Coster, and K. Elst, in Proceedings of SIMS-IX, edited by A. Benninghoven, Y. Nihei, R. Shimizu, and H. W. Werner (Wiley, New York, 1994), p. 599;
3. (c) K. Elst, W. Vandervorst, H. Bender, and J. Alay, Ref. 1(b), p. 617;
4. (d) K. Elst and W. Vandervorst, Ref. 1(b), p. 742.
5. J. B. Clegg, Surf. Interface Anal. 10, 332 (1987).
6. F. A. Stevie, J. Vac. Sci. Technol. B 10, 323 (1992).
7. (A) J. S. Williams, M. Petravic, B. G. Svensson, and M. Conway, J. Appl. Phys. 76, 1840 (1994);
8. (B) G. Svensson, B. Mohadjeir, and M. Petravic, ibid. 76, 3831 (1994).