Electron-beam-induced oxidation for single-electron devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7782-7785

  Matsutani, Masahiro ^a   Wakaya, Fujio ^a   Takaoka, Sadao ^a   Murase, Kazuo ^a   Gamo, Kenji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

AES; AFM; E beam induced oxidation; Single electron tunneling; Tunnel junction

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; CHROMIUM; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON BEAMS; ELECTRON TUNNELING; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; THICKNESS CONTROL;

ELECTRON BEAM IRRADIATION; SELECTIVE AREA OXIDATION TECHNIQUE;

TUNNEL JUNCTIONS;

EID: 0031376883     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7782     Document Type: Article

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