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Applied Physics A: Materials Science and Processing

Volumn 67, Issue 4, 1998, Pages 407-412

Characterization of vacancy-type defects and phosphorus donors introduced in 6H-SiC by ion implantation

(8) Ohshima, T a Uedono, A b Abe, K a,c Itoh, H a Aoki, Y a Yoshikawa, M a Tanigawa, S b Nashiyama, I a

a JAPAN ATOMIC ENERGY AGENCY (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

c High Reliability Components Corp (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; CARRIER CONCENTRATION; CRYSTAL GROWTH; ION IMPLANTATION; PARTICLE BEAMS; PHOSPHORUS; POSITRONS; SILICON CARBIDE; SPECTROSCOPY;

POSITRON ANNIHILATION SPECTROSCOPY; VACANCY TYPE DEFECTS;

CRYSTAL DEFECTS;

EID: 0032180951 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390050794 Document Type: Article

Times cited : (31)

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