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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 A, 1996, Pages 5986-5990

Defects in ion-implanted 3C-SiC probed by a monoenergetic positron beam

(11) Uedono, Akira a Itoh, Hisayoshi b Ohshima, Takeshi b Aoki, Yasushi b Yoshikawa, Masahito b Nashiyama, Isamu b Okumura, Hajime c Yoshida, Sadafumi c Moriya, Tsuyoshi a Kawano, Takao a Tanigawa, Shoichiro a

a UNIVERSITY OF TSUKUBA (Japan)

b JAPAN ATOMIC ENERGY AGENCY (Japan)

c ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

Defect; Doppler broadening profile; Interstitial; Ion implantation; Monoenergetic positron beam; Positron annihilation; SiC; Vacancy

Indexed keywords

INCIDENT POSITRON ENERGY; INTERSTITIAL CLUSTERS; MONOENERGETIC POSITRON BEAM; POSITRON ANNIHILATION; VACANCY CLUSTERS;

AGGLOMERATION; ANNEALING; CARBON; COMPOSITION EFFECTS; CRYSTAL DEFECTS; DOPPLER EFFECT; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; RADIATION EFFECTS;

SILICON CARBIDE;

EID: 0030378492 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.5986 Document Type: Article

Times cited : (21)

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