Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs

IEEE Journal of Quantum Electronics

Volumn 34, Issue 9, 1998, Pages 1740-1748

  Lin, Gong Ru ^a,b   Chen, Wen Chung ^c   Chang, C S ^c   Chao, Shyh Chin ^c   Wu, Kaung Hsiung ^c   Hsu, T M ^d   Lee, W C ^d   Pan, Ci Ling ^a,c  

^a IEEE   (Taiwan)

^b TATUNG INSTITUTE OF TECHNOLOGY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Arsenic ion implanted GaAs; Photocooductive switch; Ultrafast optoelectronics

Indexed keywords

ELECTRIC CURRENTS; ELECTRONIC PROPERTIES; ION IMPLANTATION; OPTICAL PROPERTIES; OPTICAL SWITCHES; PHOTOCONDUCTING MATERIALS; SUBSTRATES; ULTRAFAST PHENOMENA;

PHOTO-EXCITED CARRIER LIFETIME; PHOTOCONDUCTIVE SWITCHES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032165766     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.709591     Document Type: Article

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