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Volumn 68, Issue 5, 1996, Pages 646-648

Effect of thermal annealing on electrical conductivities in arsenic-ion-implanted GaAs

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000259404     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116496     Document Type: Article
Times cited : (8)

References (19)
  • 1
    • 21544448143 scopus 로고    scopus 로고
    • Special issue on low-temperature grown GaAs and related materials, J. Electron. Mater. 22, 1393 (1993)
    • Special issue on low-temperature grown GaAs and related materials, J. Electron. Mater. 22, 1393 (1993).
  • 10
    • 21544452820 scopus 로고    scopus 로고
    • J. Beauvillain, A. Claverie, and K. Akmoum, J. Phys. III 2, 407 (1992)
    • J. Beauvillain, A. Claverie, and K. Akmoum, J. Phys. III 2, 407 (1992).
  • 14
    • 0017468922 scopus 로고    scopus 로고
    • A. Mitonneau, G. M. Martin, and A. Mircea, Electron. Lett. 13, 191 (1977)
    • A. Mitonneau, G. M. Martin, and A. Mircea, Electron. Lett. 13, 191 (1977).
  • 17
    • 21544481778 scopus 로고    scopus 로고
    • N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials, 2nd ed. (Clarendon, Oxford, 1979), pp. 7-62
    • N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials, 2nd ed. (Clarendon, Oxford, 1979), pp. 7-62.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.