Dynamics of thermal annealing in arsenic-ion-implanted GaAs

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 2 B, 1996, Pages

  Chen, Wen Chung ^a   Lin, Gong Ru ^a   Chang, C S ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ARSENIC; BAND STRUCTURE; CHARGE CARRIERS; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DYNAMICS; ELECTRON TRANSPORT PROPERTIES; ION IMPLANTATION; TRANSMISSION ELECTRON MICROSCOPY;

ARSENIC ION IMPLANTATION; CARRIER TRANSPORT; DEEP LEVEL DEFECTS; HOPPING TYPE CONDUCTION; TEMPERATURE DEPENDENT RESISTANCE; THERMAL ANNEALING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030087455     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.L192     Document Type: Article

References (19)