Picosecond responses of low-dosage arsenic-ion-implanted GaAs photoconductors

Applied Physics Letters

Volumn 71, Issue 20, 1997, Pages 2901-2903

  Lin, Gong Ru ^a   Pan, Ci Ling ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; ION IMPLANTATION; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SWITCHES;

CARRIER LIFETIME; OPTICAL RESPONSIVITY; PHOTOCONDUCTIVE SWITCHES;

PHOTOCONDUCTING MATERIALS;

EID: 0031271743     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120210     Document Type: Article

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