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Volumn 80, Issue 3, 1996, Pages 1600-1604

Electrical properties in arsenic-ion-implanted GaAs

Author keywords

[No Author keywords available]

Indexed keywords


EID: 3743137275     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362957     Document Type: Article
Times cited : (2)

References (30)
  • 1
    • 84950105629 scopus 로고
    • Low temperature grown GaAs and related materials
    • Special issue on low temperature grown GaAs and related materials, J. Electron. Mater. 22, 1393 (1993).
    • (1993) J. Electron. Mater. , vol.22 , Issue.SPEC. ISSUE , pp. 1393


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.