Characteristics of MSM photodetectors with trench electrodes on P-type Si wafer

IEEE Transactions on Electron Devices

Volumn 45, Issue 9, 1998, Pages 2018-2023

  Laih, Li Hong ^a   Chang, Tien Chang ^a   Chen, Yen Ann ^a   Tsay, Wen Chin ^a   Hong, Jyh Wong ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC FIELDS; ELECTRODES; ETCHING; HETEROJUNCTIONS; LIGHT ABSORPTION; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS; SILICON WAFERS;

INTERDIGITATED ELECTRODES; INTRINSIC HYDROGENATED AMORPHOUS SILICON; ORIENTATION DEPENDENT ETCHING PROCESS;

PHOTODETECTORS;

EID: 0032163362     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.711369     Document Type: Article

References (16)

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