A 3 GHz Transimpedance OEIC Receiver for 1.3-1.55 μcm Fiber-Optic Systems

IEEE Photonics Technology Letters

Volumn 2, Issue 3, 1990, Pages 197-199

  Chang, G K ^a   Hong, W P ^a   Gimlett, J L ^a   Bhat, R ^a   Nguyen, C K ^a   Sasaki, G ^a   Young, J C ^a  

^a TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIBER OPTICS; INTEGRATED CIRCUITS, MONOLITHIC; OPTOELECTRONIC DEVICES; TRANSISTORS;

INDIUM PHOSPHIDE; TRANSIMPEDANCE PHOTORECEIVERS;

PHOTODETECTORS;

EID: 0025403185     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.50888     Document Type: Article

References (5)

1. J. D. Crow, “Optoelectronic integrated circuits for high speed computer networks,” in Proc. OFC'89 Tech. Dig., Houston, TX, Feb. 6–9, 1989, p. 83.
2. G.-K. Chang, W.-P. Hong, J. L. Gimlett, R. Bhat, and C. K. Nguyen, “High performance monolithic dual-MSM photodetector for long wavelength coherent receivers,” Electron. Lett., vol. 25, pp. 1021–1023, 1989.
3. J. B. Soole, H. Schumacher, H. P. Leblanc, R. Bhat, and M. Koza, “High-speed performance of OMCVD grown InAlAs/InGaAs MSM photodetectors at 1.5 and 1.3 μm,” IEEE Photon. Technol. Lett., vol. 1, pp. 250–252, 1989.
4. W.-P. Hong, G.-K. Chang, R. Bhat, W. Chan, B. Van Der Gaag, P. Lin, and J. H. Abeles, “MOCVD-Grown AlInAs/GalnAs MODFET with drain currents higher than 1.3A/mm,” Electron. Lett., vol. 25, pp. 580–581, 1989.
5. W.-P. Hong, G.-K. Chang, R. Bhat, J. L. Gimlett, C. K. Nguyen, G. Sasaki, and M. Koza, “High performance Alo.48lno.52As/Gao.47Ino.53As MSM-HEMT receiver OEIC grown by MOCVD on patterned InP substrate,” Electron. Lett., vol. 25, pp. 1561–1563, 1989.