Improving the transient response of a Si metal-semiconductor-metal photodetector with an additional i-a-SiGe:H film

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1494-1496

  Laih, Li Hong ^a   Wang, Jyh Cheng ^a   Chen, Yen Ann ^a   Tsay, Wen Chin ^a   Jen, Tean Sen ^a   Chen, Jyh Shin ^b   Hong, Jyh Wong ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

Author keywords

Intrinsic hydrogenated amorphous silicon germanium (i a SiGe:H); Metal semiconductor metal photodetector (MSM PD)

Indexed keywords

EID: 3643119597     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1494     Document Type: Article

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