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Volumn 9, Issue 4, 1988, Pages 171-173

5.2-GHz Bandwidth Monolithic GaAs Optoelectronic Receiver

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, MONOLITHIC - FABRICATION; SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS;

EID: 0023995731     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.679     Document Type: Article
Times cited : (67)

References (12)
  • 1
    • 0022809925 scopus 로고
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    • D. L. Rogers, “Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion implanted MESFET process”, IEEE Electron Device Lett., vol. EDL-7, p. 600, 1986.
    • (1986) IEEE Electron Device Lett. , vol.EDL-7 , pp. 600
    • Rogers, D.L.1
  • 2
    • 0022738526 scopus 로고
    • Compact transmitter and receiver modules with optoelectronic-integrated circuits for optical LAN's
    • T. Horimatsu et al., “Compact transmitter and receiver modules with optoelectronic-integrated circuits for optical LAN's”, IEEE J. Lightwave Technol., vol. LTA, p. 680, 1986.
    • (1986) IEEE J. Lightwave Technol. , vol.LTA , pp. 680
    • Horimatsu, T.1
  • 3
    • 0022738738 scopus 로고
    • Recent progress in optoelectronic integrated circuits (OEIC's)
    • O. Wada, T. Sakurai, and T. Nakagami, “Recent progress in optoelectronic integrated circuits (OEIC's)”, IEEE J. Quantum Electron., vol. QE-22, p. 805, 1986.
    • (1986) IEEE J. Quantum Electron. , vol.QE-22 , pp. 805
    • Wada, O.1    Sakurai, T.2    Nakagami, T.3
  • 4
    • 0022737548 scopus 로고
    • Monolithic integration of laser diodes, photomonitors, and laser driving and monitoring circuits on a semiinsulating GaAs
    • H. Nakano, S. Yamashita, T. P. Tanaka, M. Hirao, and M. Maeda, “Monolithic integration of laser diodes, photomonitors, and laser driving and monitoring circuits on a semiinsulating GaAs”, IEEE J. Lightwave Technol., vol. LT-4, p. 574, 1986.
    • (1986) IEEE J. Lightwave Technol. , vol.LT-4 , pp. 574
    • Nakano, H.1    Yamashita, S.2    Tanaka, T.P.3    Hirao, M.4    Maeda, M.5
  • 5
    • 0022808844 scopus 로고
    • Monolithic four-channel photodiode/amplifier receiver array integrated on a GaAs substrate
    • O. Wada et al., “Monolithic four-channel photodiode/amplifier receiver array integrated on a GaAs substrate”, IEEE J. Lightwave Technol., vol. LT-4, p. 1694, 1986.
    • (1986) IEEE J. Lightwave Technol. , vol.LT-4 , pp. 1694
    • Wada, O.1
  • 6
    • 0023123260 scopus 로고
    • GaAs optoelectronic integrated receiver with high-output fast-response characteristics
    • H. Hamaguchi, M. Makiuchi, T. Kumai, and O. Wada, “GaAs optoelectronic integrated receiver with high-output fast-response characteristics”, IEEE Electron Device Lett., vol. EDL-8, p. 39, 1987.
    • (1987) IEEE Electron Device Lett. , vol.EDL-8 , pp. 39
    • Hamaguchi, H.1    Makiuchi, M.2    Kumai, T.3    Wada, O.4
  • 7
    • 0022475207 scopus 로고
    • Monolithic GaAs photoreceiver for high-speed signal processing applications
    • W. S. Lee, G. R. Adams, J. Mun, and J. Smith, “Monolithic GaAs photoreceiver for high-speed signal processing applications”, Electron. Lett., vol. 22, p. 147, 1986.
    • (1986) Electron. Lett. , vol.22 , pp. 147
    • Lee, W.S.1    Adams, G.R.2    Mun, J.3    Smith, J.4
  • 8
    • 0023348133 scopus 로고
    • Monolithically integrated photoreceiver with large gain-bandwidth product
    • S. J. Wojtczuk, J. M. Ballantyne, Y. K. Chen, and S. Wanuga, “Monolithically integrated photoreceiver with large gain-bandwidth product”, Electron. Lett., vol. 23, p. 574, 1987.
    • (1987) Electron. Lett. , vol.23 , pp. 574
    • Wojtczuk, S.J.1    Ballantyne, J.M.2    Chen, Y.K.3    Wanuga, S.4
  • 9
    • 0001558518 scopus 로고
    • Receiver design for optical fiber communication systems
    • H. Kressel, Ed. New York: Springer Verlag
    • R. G. Smith and S. D. Personick, “Receiver design for optical fiber communication systems”, in Semiconductor Devices for Optical Communication, H. Kressel, Ed. New York: Springer Verlag, 1982, p. 89.
    • (1982) Semiconductor Devices for Optical Communication , pp. 89
    • Smith, R.G.1    Personick, S.D.2
  • 10
    • 0023312917 scopus 로고
    • Submicrometer GaAs MESFET with shallow channel and very high transconductance
    • B. J. Van Zeghbroeck, W. Patrick, H. Meier, and P. Vettiger, “Submicrometer GaAs MESFET with shallow channel and very high transconductance”, IEEE Electron Device Lett., vol. EDL-8, p. 118, 1987.
    • (1987) IEEE Electron Device Lett. , vol.EDL-8 , pp. 118
    • Van Zeghbroeck, B.J.1    Patrick, W.2    Meier, H.3    Vettiger, P.4
  • 11
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    • Technology for submicron recessed gate GaAs MESFETs on thin MBE layers using electron beam lithography
    • (Heraklion, Greece), Sept. to be published
    • W. Patrick, K. Däwyler, B. J. Van Zeghbroeck, and P. Vettiger, “Technology for submicron recessed gate GaAs MESFETs on thin MBE layers using electron beam lithography”, in Proc. 14th Int. Conf. GaAs and Related Compounds (Heraklion, Greece), Sept. 1987, to be published.
    • (1987) Proc. 14th Int. Conf. GaAs and Related Compounds
    • Patrick, W.1    Däwyler, K.2    Van Zeghbroeck, B.J.3    Vettiger, P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.