-
1
-
-
0022809925
-
Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion implanted MESFET process
-
D. L. Rogers, “Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion implanted MESFET process”, IEEE Electron Device Lett., vol. EDL-7, p. 600, 1986.
-
(1986)
IEEE Electron Device Lett.
, vol.EDL-7
, pp. 600
-
-
Rogers, D.L.1
-
2
-
-
0022738526
-
Compact transmitter and receiver modules with optoelectronic-integrated circuits for optical LAN's
-
T. Horimatsu et al., “Compact transmitter and receiver modules with optoelectronic-integrated circuits for optical LAN's”, IEEE J. Lightwave Technol., vol. LTA, p. 680, 1986.
-
(1986)
IEEE J. Lightwave Technol.
, vol.LTA
, pp. 680
-
-
Horimatsu, T.1
-
3
-
-
0022738738
-
Recent progress in optoelectronic integrated circuits (OEIC's)
-
O. Wada, T. Sakurai, and T. Nakagami, “Recent progress in optoelectronic integrated circuits (OEIC's)”, IEEE J. Quantum Electron., vol. QE-22, p. 805, 1986.
-
(1986)
IEEE J. Quantum Electron.
, vol.QE-22
, pp. 805
-
-
Wada, O.1
Sakurai, T.2
Nakagami, T.3
-
4
-
-
0022737548
-
Monolithic integration of laser diodes, photomonitors, and laser driving and monitoring circuits on a semiinsulating GaAs
-
H. Nakano, S. Yamashita, T. P. Tanaka, M. Hirao, and M. Maeda, “Monolithic integration of laser diodes, photomonitors, and laser driving and monitoring circuits on a semiinsulating GaAs”, IEEE J. Lightwave Technol., vol. LT-4, p. 574, 1986.
-
(1986)
IEEE J. Lightwave Technol.
, vol.LT-4
, pp. 574
-
-
Nakano, H.1
Yamashita, S.2
Tanaka, T.P.3
Hirao, M.4
Maeda, M.5
-
5
-
-
0022808844
-
Monolithic four-channel photodiode/amplifier receiver array integrated on a GaAs substrate
-
O. Wada et al., “Monolithic four-channel photodiode/amplifier receiver array integrated on a GaAs substrate”, IEEE J. Lightwave Technol., vol. LT-4, p. 1694, 1986.
-
(1986)
IEEE J. Lightwave Technol.
, vol.LT-4
, pp. 1694
-
-
Wada, O.1
-
6
-
-
0023123260
-
GaAs optoelectronic integrated receiver with high-output fast-response characteristics
-
H. Hamaguchi, M. Makiuchi, T. Kumai, and O. Wada, “GaAs optoelectronic integrated receiver with high-output fast-response characteristics”, IEEE Electron Device Lett., vol. EDL-8, p. 39, 1987.
-
(1987)
IEEE Electron Device Lett.
, vol.EDL-8
, pp. 39
-
-
Hamaguchi, H.1
Makiuchi, M.2
Kumai, T.3
Wada, O.4
-
7
-
-
0022475207
-
Monolithic GaAs photoreceiver for high-speed signal processing applications
-
W. S. Lee, G. R. Adams, J. Mun, and J. Smith, “Monolithic GaAs photoreceiver for high-speed signal processing applications”, Electron. Lett., vol. 22, p. 147, 1986.
-
(1986)
Electron. Lett.
, vol.22
, pp. 147
-
-
Lee, W.S.1
Adams, G.R.2
Mun, J.3
Smith, J.4
-
8
-
-
0023348133
-
Monolithically integrated photoreceiver with large gain-bandwidth product
-
S. J. Wojtczuk, J. M. Ballantyne, Y. K. Chen, and S. Wanuga, “Monolithically integrated photoreceiver with large gain-bandwidth product”, Electron. Lett., vol. 23, p. 574, 1987.
-
(1987)
Electron. Lett.
, vol.23
, pp. 574
-
-
Wojtczuk, S.J.1
Ballantyne, J.M.2
Chen, Y.K.3
Wanuga, S.4
-
9
-
-
0001558518
-
Receiver design for optical fiber communication systems
-
H. Kressel, Ed. New York: Springer Verlag
-
R. G. Smith and S. D. Personick, “Receiver design for optical fiber communication systems”, in Semiconductor Devices for Optical Communication, H. Kressel, Ed. New York: Springer Verlag, 1982, p. 89.
-
(1982)
Semiconductor Devices for Optical Communication
, pp. 89
-
-
Smith, R.G.1
Personick, S.D.2
-
10
-
-
0023312917
-
Submicrometer GaAs MESFET with shallow channel and very high transconductance
-
B. J. Van Zeghbroeck, W. Patrick, H. Meier, and P. Vettiger, “Submicrometer GaAs MESFET with shallow channel and very high transconductance”, IEEE Electron Device Lett., vol. EDL-8, p. 118, 1987.
-
(1987)
IEEE Electron Device Lett.
, vol.EDL-8
, pp. 118
-
-
Van Zeghbroeck, B.J.1
Patrick, W.2
Meier, H.3
Vettiger, P.4
-
11
-
-
84939361808
-
Technology for submicron recessed gate GaAs MESFETs on thin MBE layers using electron beam lithography
-
(Heraklion, Greece), Sept. to be published
-
W. Patrick, K. Däwyler, B. J. Van Zeghbroeck, and P. Vettiger, “Technology for submicron recessed gate GaAs MESFETs on thin MBE layers using electron beam lithography”, in Proc. 14th Int. Conf. GaAs and Related Compounds (Heraklion, Greece), Sept. 1987, to be published.
-
(1987)
Proc. 14th Int. Conf. GaAs and Related Compounds
-
-
Patrick, W.1
Däwyler, K.2
Van Zeghbroeck, B.J.3
Vettiger, P.4
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