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Applied Physics Letters

Volumn 58, Issue 22, 1991, Pages 2503-2505

Transit time limited response of GaAs metal-semiconductor-metal photodiodes

(5) Klingenstein, M a Kuhl, J a Rosenzweig, J b Moglestue, C b Axmann, A b

a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008450565 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.104857 Document Type: Article

Times cited : (27)

References (14)

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5
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- Rosenzweig, J.¹ Moglestue, C.² Axmann, A.³ Schneider, J.⁴ Hülsmann, A.⁵ Kuhl, J.⁶ Klingenstein, M.⁷ Leier, H.⁸ Forchel, A.⁹

7
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