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Volumn 9, Issue 11, 1988, Pages 607-609

An Investigation of the Optoelectronic Response of GaAs/InGaAs MSM Photodetectors

Author keywords

[No Author keywords available]

Indexed keywords

FIBER OPTICS; INTEGRATED CIRCUITS--COMPONENTS; INTEGRATED OPTICS--COMPONENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0024104294     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.9291     Document Type: Article
Times cited : (66)

References (11)
  • 1
    • 84957514456 scopus 로고
    • Detectors for monolithic optoelectronics
    • also presented at the Components for Fiber Optic Applications II Conf., San Diego, CA, Aug. 17-18, 1987
    • D. J. Jackson, J. Y. Josefowicz, D. B. Rensch, and D. L. Persechini, “Detectors for monolithic optoelectronics,” Proc. SPIE, vol. 839, p. 161, 1987; also presented at the Components for Fiber Optic Applications II Conf., San Diego, CA, Aug. 17-18, 1987.
    • (1987) Proc. SPIE , vol.839 , pp. 161
    • Jackson, D.J.1    Josefowicz, J.Y.2    Rensch, D.B.3    Persechini, D.L.4
  • 3
    • 0022809925 scopus 로고
    • Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion-implanted MESFET process
    • D. L. Rogers, “Monolithic integration of a 3-GHz detector/preamplifier using a refractory-gate, ion-implanted MESFET process,” IEEE Electron Device Lett., vol. EDL-7, p. 600, 1986.
    • (1986) IEEE Electron Device Lett. , vol.EDL-7 , pp. 600
    • Rogers, D.L.1
  • 4
    • 0022080182 scopus 로고
    • The DSI diode-A fast, large area optoelectronic detector
    • W. Roth, H. Schumacher, and H. Beneking, “The DSI diode-A fast, large area optoelectronic detector,” IEEE Trans. Electron Devices, vol. ED-32, p. 1034, 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 1034
    • Roth, W.1    Schumacher, H.2    Beneking, H.3
  • 5
    • 0022564725 scopus 로고
    • A low dark-current, large bandwidth Mott-barrier photodetector fabricated by quasi-ternary growth of GaAs
    • H. Schumacher, P. Narozny, Ch. Werres, and H. Beneking, “A low dark-current, large bandwidth Mott-barrier photodetector fabricated by quasi-ternary growth of GaAs,” IEEE Electron Device Lett., vol. EDL-7, p. 26, 1986.
    • (1986) IEEE Electron Device Lett. , vol.EDL-7 , pp. 26
    • Schumacher, H.1    Narozny, P.2    Werres, C.3    Beneking, H.4
  • 7
    • 0021787455 scopus 로고
    • A new GalnAs field-effect transistor with a lattice-mismatched GaAs gate for highspeed circuits
    • C. Y. Chen, A. Y. Cho, and P. A. Garbinski, “A new GalnAs field-effect transistor with a lattice-mismatched GaAs gate for highspeed circuits,” IEEE Electron Device Lett., vol. EDL-6, p. 20, 1985.
    • (1985) IEEE Electron Device Lett. , vol.EDL-6 , pp. 20
    • Chen, C.Y.1    Cho, A.Y.2    Garbinski, P.A.3
  • 8
    • 0022419601 scopus 로고
    • Measurement of absorption coefficients of Ga47ln53As over the wavelength range 1.0-1.7 μm
    • D. A. Humphreys, R. J. King, D. Jenkins, and A. J. Moseley, “Measurement of absorption coefficients of Ga47ln53As over the wavelength range 1.0-1.7 μm,” Electron. Lett., vol. 21, p. 1187, 1985.
    • (1985) Electron. Lett. , vol.21 , pp. 1187
    • Humphreys, D.A.1    King, R.J.2    Jenkins, D.3    Moseley, A.J.4
  • 9
    • 0022752948 scopus 로고
    • Low dark current GaAs metal-semiconductor-metal (MSM)
    • M. Ito and O. Wada, “Low dark current GaAs metal-semiconductor-metal (MSM),” IEEE J. Quantum Electron., vol. QE-22, p. 1073, 1986.
    • (1986) IEEE J. Quantum Electron. , vol.QE-22 , pp. 1073
    • Ito, M.1    Wada, O.2
  • 10
    • 84918177699 scopus 로고
    • The transient and dc response of a new type of GaAs photodetector
    • H. J. Klein and A. Steckenborn, “The transient and dc response of a new type of GaAs photodetector,” in Inst. Phys. Conf. Ser. 56, ch. 6, 1981, pp. 379-384.
    • (1981) Inst. Phys. Conf. Ser. , vol.56 , Issue.6 , pp. 379-384
    • Klein, H.J.1    Steckenborn, A.2
  • 11
    • 0001558518 scopus 로고
    • Receiver design for optical fiber communications systems
    • H. Kressel, Ed. Berlin, Heidelberg, New York: Springer Verlag
    • R. G. Smith and S. D. Personick, “Receiver design for optical fiber communications systems,” in Semiconductor Devices for Optical Communication, H. Kressel, Ed. Berlin, Heidelberg, New York: Springer Verlag, 1980, pp. 89-159.
    • (1980) Semiconductor Devices for Optical Communication , pp. 89-159
    • Smith, R.G.1    Personick, S.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.