Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique

Microelectronics Reliability

Volumn 38, Issue 9, 1998, Pages 1439-1446

  Cha, C L ^a,b   Chor, E F ^a   Gong, H ^a   Zhang, A Q ^b   Chan, L ^b   Xie, J ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DEGRADATION; DIELECTRIC FILMS; DIELECTRIC PROPERTIES; ELECTRIC CURRENTS; OXIDES; STRESSES;

CONSTANT CURRENT STRESSING TECHNIQUE; ELECTRICAL TOLERANCE; FLASH MEMORY DEVICES; REOXIDIZED NITRIDE OXIDE;

ELECTRIC BREAKDOWN;

EID: 0032156846     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00040-7     Document Type: Article

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