메뉴 건너뛰기




Volumn 18, Issue 6, 1997, Pages 270-271

Improvement of polysilicon oxide by growing on polished polysilicon film

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; OXIDES; PLASTIC FILMS;

EID: 0031167987     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.585353     Document Type: Article
Times cited : (16)

References (7)
  • 1
    • 0027593926 scopus 로고
    • On the electrical conduction in the dielectric layers
    • C. Cobianu, O. Popa, and D. Dascalu, "On the electrical conduction in the dielectric layers," IEEE Electron Device Lett., vol. 14, p. 213, 1993.
    • (1993) IEEE Electron Device Lett. , vol.14 , pp. 213
    • Cobianu, C.1    Popa, O.2    Dascalu, D.3
  • 3
    • 0024053861 scopus 로고
    • Polarity asymmetry of oxides grown on polycrystalline silicon
    • July
    • J. C. Lee and C. Hu, "Polarity asymmetry of oxides grown on polycrystalline silicon," IEEE Trans. Electron Devices, vol. 35, p. 1063, July 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 1063
    • Lee, J.C.1    Hu, C.2
  • 5
    • 0022756053 scopus 로고
    • Surface roughness and electrical conduction of oxide/polysilicon interfaces
    • L. Faraone and G. Harbeke, "Surface roughness and electrical conduction of oxide/polysilicon interfaces," J. Electrochem. Soc., vol. 133, no. 7, p. 1410, 1986.
    • (1986) J. Electrochem. Soc. , vol.133 , Issue.7 , pp. 1410
    • Faraone, L.1    Harbeke, G.2
  • 6
    • 36449005885 scopus 로고
    • Polycrystalline silicon oxidation method improving surface roughness at the oxide/polycrystalline silicon interface
    • M. C. Jun, Y. S. Kim, and M. K. Han, "Polycrystalline silicon oxidation method improving surface roughness at the oxide/polycrystalline silicon interface," Appl. Phys. Lett., vol. 66, no. 17, p. 2206, 1995.
    • (1995) Appl. Phys. Lett. , vol.66 , Issue.17 , pp. 2206
    • Jun, M.C.1    Kim, Y.S.2    Han, M.K.3
  • 7
    • 0030109917 scopus 로고    scopus 로고
    • Fabrication of thin-film transistors by chemical mechanical polished polycrystalline silicon films
    • C. Y. Chang, H. Y. Lin, T. F. Lei, J. Y. Cheng, L. P. Chen, and B. T. Dai, "Fabrication of thin-film transistors by chemical mechanical polished polycrystalline silicon films," IEEE Electron Device Lett., vol. 17, p. 100, 1996.
    • (1996) IEEE Electron Device Lett. , vol.17 , pp. 100
    • Chang, C.Y.1    Lin, H.Y.2    Lei, T.F.3    Cheng, J.Y.4    Chen, L.P.5    Dai, B.T.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.