Improvement on fluorine effect under high field stress in tungsten-polycide gated metal-oxide-semiconductor field-effect transistor with oxynitride and/or reoxidized-oxynitride gate dielectric

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 5 SUPPL. A, 1996, Pages 2590-2594

  Chen, Chii Wen ^a   Fang, Yean Kuen ^a   Lee, Kan Yuan ^a   Hsieh, Jang Cheng ^b   Liang, Mong Song ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b eMemory Technology Inc   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Fluorine; MOSFET; Reoxidized oxynitride; RTA; W polycide

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; DIELECTRIC MATERIALS; FLUORINE; GATES (TRANSISTOR); HOT CARRIERS; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); OXIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; TUNGSTEN COMPOUNDS;

CHARGE PUMPING; FLUORINE EFFECT; HOT CARRIER CONCENTRATION; REOXIDIZED OXYNITRIDE; TUNGSTEN POLYCIDE;

MOSFET DEVICES;

EID: 0030146418     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2590     Document Type: Article

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