Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressing

Proceedings of the IEEE Hong Kong Electron Devices Meeting

Volumn , Issue , 1997, Pages 82-85

  Cha, C L ^a   Chor, E F ^a   Gong, H ^a   Zhang, A Q ^a   Chan, L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE MANUFACTURE; SILICA;

FLASH MEMORY DEVICES; REOXIDIZED NITRIDED OXIDES (ONO);

MOS DEVICES;

EID: 0031370168     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)