Effects of constant current-stressing on reoxidized nitrided oxide (ONO) in flash memory devices

International Symposium on IC Technology, Systems and Applications

Volumn 7, Issue , 1997, Pages 356-359

  Cha, C L ^a   Chor, E F ^a   Gong, H ^a   Zhang, A Q ^b   Chan, L ^b   Xie, Joseph ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; FLUORINE COMPOUNDS; INTERFACES (MATERIALS); NITRIDING; OXIDES; POLYSILICON;

CONSTANT CURRENT-STRESSING; FLASH MEMORY DEVICES; REOXIDIZED NITRIDED OXIDE;

FLASH MEMORY;

EID: 1842759910     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. C.L.Cha, E.F. Chor, H. Gong, A.Q. Zhang and L. Chan, "Breakdown of Reoxidized Nitrided Oxide (ONO) In Flash Memory Devices Upon Current Stressing", Hong Kong Electron Devices Meeting, August 1997 (in press).
2. 4 Films", IEEE Transaction On Electron Devices, vol. 40, 1993, pp. 2231-2236.
3. Naoto Matsuo and Akio Sasaki, "Conduction Mechanism Of Oxide-Nitride-Oxide Film Formed On The Rough Polycrystalline Silicon Surface", Solid-State Electronics, vol. 39, No. 3, 1996, pp. 337-342.
4. Chii-Wen Chen, Yean-Kuen Fang, Kan-Yuan Lee, Jang-Cheng Hsieh, and Mong-Song Liang, "Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric", Japanese Journal of Applied Physics, vol. 35, Part 1, No. 5A, May 1996, pp. 2590-2594.
5. M.S. Feng, K.C. Liang, C.Y. Chang, and L.Y. Lin, "Effects of polysilicon gate on characteristics of ONO capacitors", Materials Chemistry and Physics, vol. 31, 1992, pp. 229-234.
6. 2 Capacitors Prior to Dielectric Breakdown", Japanese Journal of Applied Physics, vol. 33, Part 1, No. 4A, April 1994, pp. 1820-1822.