Development of sub-quarter-μm MONOS (metal/oxide/nitride/oxide/semiconductor) type memory transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 898-901

  Böhm, Thomas ^a   Nakamura, Akihiro ^a   Aozasa, Hiroshi ^a   Yamagishi, Machio ^a   Komatsu, Yasutoshi ^a  

^a Semiconductor Company   (Japan)

Author keywords

MONOS; Nonvolatile memory; ONO; RTN; Sub quarter m

Indexed keywords

CHEMICAL RESISTANCE; GATES (TRANSISTOR); MORPHOLOGY; NITRIDES; NITRIDING; NONVOLATILE STORAGE; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR STORAGE; SURFACES;

DATA RETENTION; ERASE SPEED; GATE LENGTH; LOW PROGRAMMING VOLTAGE; METAL OXIDE NITRIDE OXIDE SEMICONDUCTOR; NONVOLATILE MEMORY; OXIDE NITRIDE OXIDE LAYER; PROGRAMMED THRESHOLD VOLTAGES; RAPID THERMAL NITRIDATION;

TRANSISTORS;

EID: 0030082881     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.898     Document Type: Article

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