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Volumn 71, Issue 19, 1997, Pages 2779-2781

Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000563870     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120131     Document Type: Article
Times cited : (42)

References (18)
  • 15
    • 85033324996 scopus 로고    scopus 로고
    • note
    • Similarily large transmission changes have been observed in the comparison of cw electro-absorption changes in LT AlGaAs and GaAs quantum wells in Ref. 4.
  • 16
    • 85033308182 scopus 로고    scopus 로고
    • note
    • We ruled out that the temporal delay of the maximum is due to chirp of the probe pulse.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.