MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 877-882

  Uppal, Parvez N ^a   Charache, Greg ^a   Baldasaro, Paul ^a   Campbell, Brian ^a   Loughin, Stephen ^a   Svensson, Stefan ^a,b   Gill, David ^a,c  

^a LOCKHEED MARTIN   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INFRARED RADIATION; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SHORT CIRCUIT CURRENTS; SUBSTRATES;

THERMOPHOTOVOLTAIC DEVICES;

SEMICONDUCTOR DIODES;

EID: 0031144252     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00977-3     Document Type: Article

References (4)

1. 1st NREL Conf. on the Thermophotovoltaic Generation of Electricity, Copper Mountain, CO, AIP Conf. Proc. 321 (1994).
2. 2nd NREL Conf. on the Thermophotovoltaic Generation of Electricity, Copper Mountain, CO, AIP Conf. Proc. 358 (1995).
3. M.P. Mikhailova and A.N. Titkov, Semicond. Sci. Technol. 9 (1994) 1279.
4. G.W. Charache, J.L. Egley, L.R. Danielson, D.M. Depoy, P.F. Baldasaro, B.C. Campbell, S. Hui, L.M. Fraas and S.J. Wojtczuk, 25th Photovoltaic Specialists Conf., Crystal City, VA, 13-17 May, 1996.