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Volumn 167, Issue 3-4, 1996, Pages 397-405

Dependence of indium incorporation upon the substrate misorientation during growth of InxGa11-xAs by metalorganic vapour phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ARSENIC; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DESORPTION; DIFFUSION; INDIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS;

EID: 0030264881     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00304-1     Document Type: Article
Times cited : (7)

References (37)
  • 3
    • 0001860827 scopus 로고
    • and references therein
    • M.J. Ludowise, J. Appl. Phys. 58 (1985) R31, and references therein.
    • (1985) J. Appl. Phys. , vol.58
    • Ludowise, M.J.1
  • 15
    • 30244563377 scopus 로고
    • Semiconductors and Semimetals, Eds. R.K. Willardson and A.C. Beer, Vol. Ed. T.P. Pearsall (Academic Press, New York, ch. 2)
    • F.H. Pollak, in: Semiconductors and Semimetals, Eds. R.K. Willardson and A.C. Beer, Vol. 32, Strained-Layer Superlattices Physics, Vol. Ed. T.P. Pearsall (Academic Press, New York, 1990) ch. 2.
    • (1990) Strained-layer Superlattices Physics , vol.32
    • Pollak, F.H.1
  • 20
    • 30244478134 scopus 로고
    • Thesis University of Nijmegen, ch. 3
    • J. te Nijenhuis, Thesis University of Nijmegen, 1993, ch. 3.
    • (1993)
    • Te Nijenhuis, J.1
  • 22
    • 30244504338 scopus 로고    scopus 로고
    • unpublished results
    • P.R. Hageman, unpublished results.
    • Hageman, P.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.