Measurement of MOSFET Substrate Dopant Profile via Inversion Layer-to-Substrate Capacitance

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1732-1736

  Chiang, Charles Yu Teh ^a,b,c   Hsu, Che Ta Clement ^a,b,c   Yeow, Y T ^a,b,c   Ghodsi, Ramin ^a,b,c  

^a IEEE   (United States)

^b UNIVERSITY OF QUEENSLAND   (Australia)

^c CYPRESS SEMICONDUCTOR   (United States)

Author keywords

Mosfet's; Semiconductor device doping; Semiconductor device measurements; Semiconductor device modeling

Indexed keywords

CAPACITANCE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

INVERSION LAYER TO SUBSTRATE CAPACITANCE; MOSFET SUBSTRATE DOPANT PROFILE;

MOSFET DEVICES;

EID: 0032138066     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704372     Document Type: Article

References (10)

1. W. V. Gelder and E. H. Nicollian, Silicon impurity distribution as revealed by pulsed MOS C-V measurements, J. Electrochem. Soc., vol. 118, no. 1, pp. 138-141, 1971.
2. D. P. Kennedy and R. R. O'Brien, On the measurement of impurity atom distributions by the differential capacitance technique, IBM J. Res. Develop., vol. 13, pp. 212-214, 1969.
3. MEDICI: Two-Dimensionat Device Simulation Program, TMA Associates, Palo Alto, CA, 1994.
4. Y. T. Yeow, Measurement and numerical modeling of short-channel MOSFET gate capacitances, IEEE Trans Electron Devices, vol. ED-34, pp. 2510-2520, Dec. 1987.
5. H. William, Numerical Recipes in C: The Art of Scientific Computing. Cambridge, U.K.: Cambridge Univ. Press, 1988, pp. 650-655.
6. J. M. Shannon, DC measurement of the space charge capacitance and impurity profile beneath the gate of an MOST, Solid-State Electron., vol. 14, pp. 1099-1106, 1971.
7. M. Chi and C. Hu, Errors in threshold-voltage measurements of MOS transistors for dopant-profile determinations, Solid-State Electron., vol. 24, pp. 313-316, Apr. 1981.
8. M. G. Buehler, The d-c MOSFET dopant profile method, J. Electrochem. Soc., vol. 127, pp. 701-704, 1980.
9. H. G. Lee, S. Y. Oh, and G. Fuller, A simple and accurate method to measure the threshold voltage of an enhancement-mode MOSFET, IEEE Trans. Electron Devices, vol. ED-29, pp. 346-348, Feb. 1982.
10. G. P. Carver, Influence of short-channel effects on dopant profiles obtained from the dc MOSFET profile method, IEEE Trans. Electron Devices, vol. ED-30, pp. 948-954, June 1983.