A Simple and Accurate Method to Measure the Threshold Voltage of an Enhancement-Mode MOSFET

IEEE Transactions on Electron Devices

Volumn 29, Issue 2, 1982, Pages 346-348

  Lee, Hee Gook ^a   Oh, Soo Young ^a   Fuller, Glen ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - VOLTAGE; SEMICONDUCTOR DEVICES, MOS;

TRANSISTORS, FIELD EFFECT;

EID: 0020087476     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1982.20707     Document Type: Article

References (7)

1. A. S. Grove, Physics and Technology of the Semiconductor Devices. New York: Wiley, 1967.
2. W. M. Penney and L. Lau, MOS Integrated Circuits. R. E. Krieger Publishing Company, 1972, p. 126.
3. T. Toyabe and S. Asai, “Analytical models of threshold voltage and breakdown voltage of short-channel MOSFET's derived from two-dimensional analysis,” IEEE Trans. Electron Devices, vol. ED-26, p. 453, 1979.
4. R. M. Swanson and J. D. Meindl, “Ion implanted complementary MOS transistors in low voltage circuits,” IEEE J. Solid-State Circuits, vol. SC-7, no. 2, p. 146, 1972.
5. C. G. Sodini, T. W. Ekstedt, B. Hoefflinger, and J. L. Moll, “Charge accumulation and mobility in thin gate MIS devices,” presented at 38th Annual Device Research Conf. (Ithaca, NY), June 1980.
6. L. Vadasz and A. S. Grove, “Temperature dependence of MOS transistor characteristics below saturation,” IEEE Trans. Electron Devices, vol. ED-13, p. 836, 1966.
7. F. H. Gaensslen, V. L. Rideout, E. J. Walker, and J. J. Walker, “Very small MOSFET's for low temperature operation,” IEEE Trans. Electron Devices, vol. ED-24, p. 218, 1977.