D.C. measurement of the space charge capacitance and impurity profile beneath the gate of an MOST

Solid State Electronics

Volumn 14, Issue 11, 1971, Pages 1099-1106

  Shannon, J M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002477268     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(71)90021-9     Document Type: Article

References (10)

1. Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS Structure
2. On the Measurement of Impurity Atom Distributions by the Differential Capacitance Technique [Letter to the Editor]
3. Silicon Impurity Distribution as Revealed by Pulsed MOS C-V Measurements