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Volumn 30, Issue 8, 1983, Pages 948-954

Influence of Short-Channel Effects on Dopant Profiles Obtained from the DC MOSFET Profile Method

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0020797401     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1983.21242     Document Type: Article
Times cited : (10)

References (17)
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    • Chi, M.1    Hu, C.2
  • 4
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    • MOS (Metal Oxide Semiconductor) Physics and Technology
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    • (1982) , pp. 380-408
    • Nicollian, E.H.1    Brews, J.R.2
  • 5
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    • The DC MOSFET dopant profile method
    • M. G. Buehler, “The DC MOSFET dopant profile method,” J. Electrochem. Soc., vol. 127, pp. 701-704, 1980.
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    • Buehler, M.G.1
  • 6
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    • M. G. Buehler, “Effect of the drain-source voltage on dopant profiles obtained from the DC MOSFET profile method,” IEEE Trans. Electron Devices, vol. ED-27, pp. 2273-2217, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.27 ED , pp. 2273
    • Buehler, M.G.1
  • 7
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    • New York: Wiley
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    • (1982) 2nd ed. , pp. 440
    • Sze, S.M.1
  • 8
    • 84944485155 scopus 로고
    • The theory of p-n junctions in semiconductors and p-n junction transistors
    • W. Shockley, “The theory of p-n junctions in semiconductors and p-n junction transistors,” Bell Syst. Tech. J., vol. 28, pp. 435-489, 1949.
    • (1949) Bell Syst. Tech. J. , vol.28 , pp. 435-489
    • Shockley, W.1
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  • 10
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.