The D-C MOSFET Dopant Profile Method

Journal of the Electrochemical Society

Volumn 127, Issue 3, 1980, Pages 701-704

  Buehler, M G ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

diffusion implantation; semiconductor

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0018997638     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2129736     Document Type: Article

References (8)

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2. J. M. Shannon, Solid-State Electron., 14, 1099 (1971).
3. A. S. Grove, “Physics and Technology of Semiconductor Devices,” Wiley, New York (1967).
4. P. P. Wang, IEEE Trans. Electron Devices, ED-24, 196 (1977).
5. S. M. Sze, “Physics of Semiconductor Devices,” Wiley-Interscience, New York (1969).
6. A. R. LeBlanc, D. Dale Kleppinger, and J. P. Walsh, Journal of the Electrochemical Society, 119,1068 (1972).
7. K. Zeigler, E. Klausmann, and S. Kar, Solid-State Electron., 18,189 (1975).
8. M. G. Buehler, Natl. Bur. Stand. Spec. Publ., 400, 22 (1976).