Errors in threshold-voltage measurements of MOS transistors for dopant-profile determinations

Solid State Electronics

Volumn 24, Issue 4, 1981, Pages 313-316

  Chi, Min Hwa ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0019552629     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(81)90023-X     Document Type: Article

References (7)

1. Dopant profiles determined from enhancement-mode MOSFET dc measurements
2. Characteristics of the indium-doped infrared sensing MOSFET(IRFET)