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Volumn 118, Issue 1, 1971, Pages 138-141

Silicon Impurity Distribution as Revealed by Pulsed MOS C-V Measurements

Author keywords

impurity profile; pulsed C V measurements; pulsed MOS measurements; silicon impurity distribution

Indexed keywords


EID: 84951348219     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2407927     Document Type: Article
Times cited : (118)

References (15)
  • 13
    • 0003879668 scopus 로고
    • Physics and Technology of Semiconductor Devices
    • John Wiley & Sons Inc., New York
    • A.S. Grove, “Physics and Technology of Semiconductor Devices,” John Wiley & Sons Inc., New York (1967).
    • (1967)
    • Grove, A.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.