Thin gate oxides promise high reliability

Semiconductor International

Volumn 21, Issue 8, 1998, Pages 215-222

  Hu, Chenming ^a   Park, Donggun ^a   King, Ya Chin ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); MATHEMATICAL MODELS; RELIABILITY; SILICA; THICKNESS CONTROL;

DRIFT; PLASMA CHARGING; THIN GATE OXIDE;

MOSFET DEVICES;

EID: 0032121136     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (20)

1. I.C. Chen, S.E. Holland and C. Hu, IEEE Transactions on Electron Devices, ED-32 (1989), 413.
2. K.F. Shuegraf and C. Hu, Proceedings International Reliability Physics Symposium, (1994), 126.
3. R. Moazzami, J.C. Lee and C. Hu, IEEE Transactions on Electron Devices, ED-36 (1989), 2462.
4. D.J. DiMaria, Journal of Applied Physics, 68 (1990), 5234.
5. R. Moazzami and C. Hu, IEEE Transactions on Electron Devices, ED-37 (1990), 1643.
6. K.F. Shuegraf and C. Hu, Proceedings of the International Symposium on VLSI Technology, Systems and Applications, Taipei (1993), 86.
7. K. Okada, S. Kawasaki and Y. Hirofuji, Proceedings of the International Conference on Solid State Devices and Materials, Japan (1994), 565.
8. R. Moazzami and C. Hu, Proceedings of the International Electron Device Meeting, San Francisco, Calif., (1992), 139.
9. S.I. Takagi, N. Yasuda and A. Toriumi International Electron Device Meeting, San Francisco, Calif., (1996), 323.
10. C.H. Wann and C. Hu, International Electron Device Meeting, Washington, D.C., (1995), 867.
11. K.F. Shuegraf, D. Park and C. Hu, International Electron Device Meeting, San Francisco, Calif., (1994), 609.
12. D. Park and C. Hu, Proceedings of the 2nd International Symposium on Plasma Process-Induced Damage, (1997), 15.
13. A.B. Joshi, L. Chung, B.W. Min and D. L. Kwong, Proceedings of the International Reliability Physics Symposium, Dallas, Texas, (1996), 300.
14. H. Shin, K. Noguchi and C. Hu, IEEE Electron Device Letters, 14, (1993), 509.
15. Y.C. King, H. Fujioka, S. Kamohara, W.C. Lee and C. Hu, Proceedings of the International Symposium on VLSI Technology, Systems, and Applications, Taipei, (1997), 245.
16. R. Rios and N.D. Arora, International Electron Device Meeting, San Francisco, Calif., (1994), 613.
17. T.C. Ong, P.K. Ko and C. Hu, IEEE Transactions on Electron Devices, ED-34, (1987), 2129.
18. C. Hu, International Electron Device Meeting, San Francisco, Calif., (1996), 319.
19. T. Kuroi, S. Shimizu, S. Ogino, A. Teramoto, M. Shirahata, Y. Okumura, M. Inuishi and H. Miyoshi, Symposium on VLSI Technology, Digest Technical Papers, Japan, (1996), 210.
20. K. Chen, C. Hu, P. Fang, M.R. Lin and D. Wollesen, IEEE Transactions on Electron Devices, ED-44, (1997), 1556.