Gate oxide thickness dependence of RIE-induced damages on N-channel MOSFET reliability

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1996, Pages 300-304

  Joshi, A B ^a   Chung, L ^a   Min, B W ^a   Kwong, D L ^a  

^a Rockwell Semiconductor Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; GATES (TRANSISTOR); HOT CARRIERS; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; STRESSES;

FOWLER-NORDHEIM STRESS; GATE OXIDE THICKNESS DEPENDENCE;

MOSFET DEVICES;

EID: 0029697536     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/relphy.1996.492134     Document Type: Conference Paper

References (17)