Sub-quarter-micron dual gate CMOSFETs with ultra-thin gate oxide of 2nm

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 210-211

  Kuroi, T ^a   Shimizu, S ^a   Ogino, S ^a   Teramoto, A ^a   Shirahata, M ^a   Okumura, Y ^a   Inuishi, M ^a   Miyoshi, H ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CMOS INTEGRATED CIRCUITS; DEGRADATION; GATES (TRANSISTOR); HOT CARRIERS; ION IMPLANTATION; NITRIDING; NITROGEN; OXIDES; PERFORMANCE; RELIABILITY; ULTRATHIN FILMS;

BORON PENETRATION; CHANNEL HOT HOLE INJECTION; NITROGEN IMPLANTATION TECHNIQUE; ULTRATHIN GATE OXIDE;

MOSFET DEVICES;

EID: 0029701430     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)