Ion implantation in Al xGa 1-xAs: Damage structures and amorphization mechanisms

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 4, 1998, Pages 606-617

  Lagow, Benjamin W ^a,c,d   Turkot, Britt A ^a,d,e   Robertson, Ian M ^a,d,f,g,h   Coleman, James J ^a,d,i,j,k   Roh, S D ^a,d   Forbes, David V ^a,d,i,l   Rehn, Lynn E ^b   Baldo, Peter M ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^e INTEL CORPORATION   (United States)

^f UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^g UNIVERSITY OF OXFORD   (United Kingdom)

^h Department of Metallurgy ^*

ⁱ LUCENT TECHNOLOGIES   (United States)

^j Rockwell International   (United States)

^k OPTICAL SOCIETY OF AMERICA   (United States)

^l NORTHROP GRUMMAN CORPORATION   (United States)

more..

Author keywords

Ion implantation; Radiation effects; Semiconductor materials

Indexed keywords

AMORPHIZATION; ION IMPLANTATION; POINT DEFECTS; RADIATION DAMAGE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM GALLIUM ARSENIDE;

HETEROJUNCTIONS;

EID: 0032121115     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.720470     Document Type: Article

References (68)

1. A. J. Steckl, P. Chen, H. E. Jackson, A. G. Choo, X. Cao , J. T. Boyd, and M. Kumar, "Review of focused ion beam implantation mixing for the fabrication of GaAs-based optoelectronic devices," J. Vac. Sci. Technol. B, vol. 13, pp. 2570-2575, 1995.
2. +-ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FET's," Appl. Surf. Sci., vol. 117/118, pp. 352-356, 1997.
3. M. W. Thompson, Defects and Radiation Damage in Metals. Cambridge, U.K.: Cambridge Univ. Press, 1969.
4. I. M. Robertson, R. S. Averback, D. K. Tappin, and L. E. Rehn, Eds., Fundamentals of Radiation Damage: Proc. Int. Summer School on the Fundamentals of Radiation Damage. Amsterdam, The Netherlands: North-Holland, 1994, vol. 216.
5. D. R. Olander, Fundamental Aspects of Nuclear Reactor Fuel Elements. Springfield, VA: National Technical Information Service, 1976.
6. A. Dunlop, F. Rullier-Albenque, C. Jaouen, C. Templier, and J. Davenas, "Materials under Irradiation," in Diffusion and Deject Data: Solid State Data - Part. B. Vaduz: Sci.-Tech., 1993, vol. 30-31.
7. L. W. Hobbs, F. W. Clinard, Jr., S. J. Zinkle, and R. C. Ewing, "Radiation effects in ceramics," J. Nucl. Mater., vol. 216, pp. 291-321, 1994.
8. G. H. Kinchin and R. S. Pease, "The displacement of atoms in solids by radiation," Rep. Prog. Phys., vol. 18, pp. 1-51, 1955.
9. J. A. Brinkman, "On the nature of radiation damage in metals," J. Appl. Phys., vol. 25, pp. 961-970, 1954.
10. J. A. Brinkman, "Production of atomic displacements by high-energy particles," Amer. J. Phys., vol. 24, pp. 246-267, 1956.
11. A. Seeger, "The nature of radiation damage in metals," in Radiation Damage in Solids. Vienna, Austria: IAEA, 1962, vol. 1, pp. 101-127.
12. Proc. Int. Conf. Computer Simulations of Radiation Effects in Solids: COSIRES 1992. Yverdon. Switzerland: Gordon and Breach, 1992, vol. 130/131.
13. M.-J. Caturla and T. Diaz de la Rubia, "Dose rate effects during damage accumulation in silicon," in Microstructure Evolution During Irradiation, I. M. Robertson, G. S. Was, L. W. Hobbs, and T. Diaz de la Rubia, Eds. Pittsburgh, PA: Mater. Res. Soc., 1997, vol. 439, pp. 125-129.
14. T. Diaz de la Rubia and G. H. Gilmer, "Structural transformations and defect production in ion implanted silicon," Phys. Rev. Lett., vol. 74, pp. 2507-2510, 1995.
15. T. Mattila and R. N. Nieminen, "Direct antisite formation in electron irradiation of GaAs," Phys. Rev. Lett., vol. 74, pp. 2721-2724, 1995.
16. C. P. Flynn and R. S. Averback, "Electron-phonon interactions in energetic displacement cascades," Phys. Rev. A, vol. 38, pp. 7118-7120, 1988.
17. I. M. Robertson, D. K. Tappin, and M. A. Kirk, "The role of melting temperature and electron-phonon coupling in the formation of clustered vacancy defects from heavy-ion-generated displacement cascades," Phil. Mag. A, vol. 68, pp. 843-864, 1993.
18. D. K. Tappin, I. M. Robertson, and M. A. Kirk, "The role of electron-phonon coupling in the formation of clustered vacancy defects in elemental metals from heavy-ion irradiation," Phil. Mag. A, vol. 70, pp. 463-479, 1994.
19. R. S. Averback and M. Ghaly, "Fundamental aspects of defect production in solids," Nucl. Instr. Meth. B, vol. 127/128, pp. 1-11, 1997.
20. J. F. Gibbons, "Ion implantation in semiconductors - Part I: Range distribution theory and experiments," Proc. IEEE, vol. 56, pp. 295-320, 1968.
21. L. Chadderton, "Nucleation of damage centres during ion implantation of silicon," Rad. Eff., vol. 8, pp. 77-86, 1971.
22. L. M. Miller and J. J. Coleman, "Metalorganic chemical vapor deposition," CRC Crit. Rev. Solid State Mater Sci., vol. 15, pp. 1-26, 1988.
23. A. Taylor, C. W. Allen, and E. A. Ryan, "The HVEM-Tandem accelerator facility at Argonne National Laboratory," Nucl. Instrum. Meth. B, vol. 24/25, pp. 598-602, 1987.
24. 0.4As/GaAs heterostructures," J. Appl. Phys., vol. 80, pp. 4366-4371, 1996.
25. 0.4As/GaAs heterostructures using ion channeling and transmission electron microscopy," Ph.D. dissertation, Univ. of Illinois at Urbana-Champaign, 1996.
26. A. G. Cullis, D. C. Jacobson, J. M. Poate, N. G. Chew, C. R. Whitehouse, and S. J. Pearton, "Ion implantation damage and its annealing characteristics in an AlAs/GaAs layer structure," in Advances in Materials, Processing, and Devices in III-V Compound Semiconductors, vol. 144, D. K. Sadana, L. Eastman, and R. Dupuis, Eds. Pittsburgh, PA: Mater. Res. Soc., 1989, pp. 361-366.
27. A. G. Cullis, N. G. Chew, C. R. Whitehouse, D. C. Jacobson, J. M. Poate, and S. J. Pearton, "Material-dependent amorphization and epitaxial crystallization in ion-implanted AlAs/GaAs layer structures," Appl. Phys. Lett., vol. 52, pp. 1211-1213, 1989.
28. A. G. Cullis, P. W. Smith, D. C. Jacobson, and J. M. Poate, "Differential ion damage and its annealing behavior in AlAs/GaAs heterostructures," J. Appl. Phys, vol. 69, pp. 1279-1286, 1991.
29. A. G. Cullis, D. C. Jacobson, A. Polman, P. W. Smith, J. M. Poate, and C. R. Whitehouse, "The energy dependence of ion damage in AlGaAs/GaAs heterostructures and the effects of implanted impurity," in Phase Formation and Modification by Beam-Solid Interactions, vol. 235, G. S. Was, L. E. Rehn, and D. M. Follstaedt, Eds. Pittsburgh, PA: Materials Research Society, 1992, pp. 229-234.
30. I. Jencic, M. W. Bench, I. M. Robertson, and M. A. Kirk, "A comparison of the amorphization induced in AlGaAs and GaAs by heavy-ion irradiation," J. Appl. Phys., vol. 69, pp. 1287-1293, 1991.
31. J. L. Klatt, J. Alwan, J. J. Coleman, and R. S. Averback, "Anisotropic damage production at ion irradiated GaAs/AlAs interfaces," in Phase Formation and Modification by Beam-Solid Interactions, vol. 235, G. S. Was, L. E. Rehn, and D. M. Follstaedt, Eds. Pittsburgh, PA: Materials Research Society, 1992, pp. 235-240.
32. J. L. Klatt, R. S. Averback, D. V. Forbes, and J. J. Coleman "Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs," Appl. Phys. Lett., vol. 63, pp. 976-978, 1993
33. H. H. Tan, C. Jagadish, J. S. Williams, J. Zou, D. J. H. Cockayne, and A. Sikorski, "Ion damage buildup and amorphization processes in AlGaAs," J. Appl. Phys., vol. 77, pp. 87-94, 1995.
34. H. H. Tan, C. Jagadish, J. S. Williams, J. Zou, and D. J. H. Cockayne, "Ion damage buildup and amorphization processes in GaAs-AlGaAs multilayers," J. Appl. Phys., vol. 80, pp. 2691-2701, 1996.
35. J. L. Klatt, R. S. Averback, D. V. Forbes, and J. J. Coleman, "Interfacial damage in ion-irradiated GaAs/AlAs superlattices," Phys. Rev. B, vol. 48, pp. 17629-17632, 1993.
36. W. H. Weisenberger, S. T. Picraux, and F. L. Vook, "Low temperature channeling measurements on ion implantation disorder in GaAs," Rad. Eff., vol. 9, p. 121, 1971.
37. N. A. G. Ahmed, C. E. Chriostodoulides, and G. Carter, "Flux, fluence and implantation temperature dependence of disorder produced by 40 keV N ion irradiation of GaAs," Rad. Eff., vol. 71, p. 1980, 1980.
38. N. P. Tognetti, G. Carter, D. V. Stevanovic, and D. A. Thompson, "Annealing studies of ion-implanted GaAs in the 40-300 K range," Rad. Eff., vol. 66, p. 15, 1982.
39. M. W. Bench, "Transmission electron microscopy investigation of ion implantation damage in GaAs and other semiconductors," Ph.D. dissertation, Univ. of Illinois at Urbana-Champaign, 1991.
40. L. M. Howe and M. H. Rainville, "The creation and annealing of heavy ion damage in silicon," in Materials Modification and Growth Using Ion Beams, M. J. Gibson, A. E. White, and P. P. Pronko, Eds. Pittsburgh, PA: Mater. Res. Soc., 1987, vol. 93, pp. 79-86.
41. O. W. Holland, C. W. White, M. K. El-Ghor, and J. D. Budai, "MeV, self-ion implantation in Si at liquid nitrogen temperature: A study of damage morphology and its anomalous annealing behavior," J. Appl. Phys, vol. 68, pp. 2081-2086, 1990.
42. 0.4As heterostructures," in Microstructure of Irradiated Materials, I. M. Robertson, L. E. Rehn, S. J. Zinkle, and W. J. Phythian, Eds. Pittsburgh, PA: Mater. Res. Soc., 1995, vol. 373, pp. 451-456.
43. B. W. Lagow, unpublished data.
44. P. Partyka, R. S. Averback, D. V. Forbes, J. J. Coleman, and P. Ehrhart, "X-ray diffraction and channeling-RBS studies of ion implantation damage in AlGaAs," J. Appl. Phys., vol. 83, pp. 1265-1269, 1998.
45. A. Gaber, H. Zillgen, P. Ehrhart, P. Partyka, and R. S. Averback, "Lattice parameter changes and point defect reactions in low temperature electron irradiated AlAs," J. Appl. Phys., vol. 82, pp. 5348-5351, 1997.
46. J. S. Williams and M. W. Austin, "Ion-beam-induced annealing effects in GaAs," Nucl. Instrum. Meth., vol. 168, pp. 307-312, 1980.
47. I. Jencic, M. W. Bench, I. M. Robertson, M. A. Kirk, and J. Peternelj, "A comparison of the rates of amorphization in the AlGaAs/GaAs system," Nucl. Instrum. Meth., vol. B59/60, pp. 458-461, 1991.
48. M. W. Bench, D. K. Tappin, and I. M. Robertson, "On the suitability of the down-zone imaging technique to the study of radiation damage," Phil. Mag. Lett., vol. 66, pp. 39-45, 1992.
49. B. W. Lagow, B. A. Turkot, I. M. Robertson, L. E. Rehn, P. M. Baldo, S. D. Roh, D. V. Forbes, and J. J. Coleman, "Amorphization mechanisms in AlGaAs," in Microstructure Evolution During Irradiation, vol. 439, I. M. Robertson, G. S. Was, L. W. Hobbs, and T. D. de la Rubia, Eds. Pittsburgh, PA: Mater. Res. Soc., 1997, pp. 197-202.
50. E. A. Dobisz, B. Tell, H. G. Craighead, and M. C. Tamargo, "Disordering of AlAs-GaAs superlattices by Si and S implantation at different implant temperatures," J. Appl. Phys., vol. 60, pp. 4150-4153, 1986.
51. D. J. Eaglesham, J. M. Poate, D. C. Jacobson, M. Cerullo, L. N. Pfeiffer, and K. West, "Fabrication of amorphous-crystalline superlattices in GeSi-Si and GaAs-AlAs," Appl. Phys. Lett., vol. 58, pp. 523-525, 1991.
52. J. S. Williams, C. Jagadish, A. Clark, G. Li, and C. Larsen, "Damage accumulation and amorphization in GaAs-AlGaAs heterostructures," Nucl. Instrum. Meth., vol. B74, pp. 80-83, 1993.
53. E. A. Dobisz, M. Fatemi, H. B. Dietrich, A. W. McCormick, and J. P. Harbison, "Implantation damage in GaAs-AlAs superlattices of different layer thickness," Appl. Phys. Lett., vol. 59, pp. 1338-1340, 1991.
54. + ion implantation," in Proc. 46th Annu. Meet. Electron Microscopy Society of America, G. W. Bailey, Ed. San Francisco, CA: San Francisco Press, 1988, pp. 908-909.
55. M. Bode, A. Ourmazd, J. A. Rentshler, M. Hong, L. C. Feldman, and J. P. Mannaerts, "Direct observation of intermixing in GaAs/AlAs multilayers after very low-dose ion-implantation." in Beam-Solid Interactions: Physical Phenomena, J. A. Knapp, P. Bergesen, and R. A. Zuhr, Eds. Pittsburgh, PA: Mater. Res. Soc., 1990, vol. 157, pp. 197-202.
56. M. Bode, A. Ourmazd, J. Cunningham, and M. Hong, "Interaction of energetic ions with inhomogeneous solids," Phys. Rev. Lett., vol. 67, pp. 843-846, 1991.
57. A. Ourmazd, D. W. Taylor, J. Cunningham, and C. W. Tu, "Chemical mapping of semiconductor interfaces at near-atomic resolution," Phys. Rev. Lett., vol. 62, pp. 933-936, 1989.
58. A. Ourmazd, D. W. Taylor, M. Bode, and Y. Kim, "Quantifying the information content of lattice images," Sci., vol. 246, pp. 1571-1577, 1989.
59. 0.4As/GaAs heterostructures," J. Appl. Phys., vol. 83, pp. 2539-2547, 1998
60. J. S. Williams, H. H. Tan, R. D. Goldberg, R. A. Brown, and C. Jagadish, "Dynamic annealing and amorphous phase formation in Si, GaAs and AlGaAs under ion irradiation," in Materials Synthesis and Processing Using Ion Beams, R. J. Culbertson, O. W. Holland, K. S. Jones, and K. Maex, Eds. Pittsburgh, PA: Mater. Res. Soc., 1994, vol. 316, pp. 15-25.
61. R. A. Brown and J. S. Williams, "Nucleation-limited amorphization of GaAs at elevated temperatures," Phys. Rev. B, vol. 55, pp. 12852-12854, 1997.
62. _, "Critical temperature and ion flux dependence of amorphization in GaAs," J. Appl. Phys., vol. 87, pp. 7681-7683, 1997.
63. P. Ehrhart, K. Karsten, and A. Pillukat, "Point defects in GaAs and other semiconductors," in Beam-Solid Interactions: Fundamentals and Applications, M. Nastasi, L. R. Harriott, N. Herbots, and R. S. Averback, Eds. Pittsburgh, PA: Mater. Res. Soc., 1993, vol. 279, pp. 75-86.
64. M. W. Bench, I. M. Robertson, and M. A. Kirk, "Transmission electron microscopy investigation of the damage produced in individual displacement cascades in GaAs and GaP," Nucl. Instrum. Meth., vol. B59/60, pp. 372-376, 1991.
65. _, "In situ TEM observations of heavy ion damage in gallium arsenide," in Fundamentals of Beam-Solid Interactions and Transient Thermal Processing, M. J. Aziz, L. E. Rehn, and B. Stritzker, Eds. Pittsburgh, PA: Mater. Res. Soc., 1988, vol. 100, pp. 293-298.
66. J. F. Ziegler, J. P. Biersack, and U. Littmark, "Monte Carlo calculations of range distributions," in The Stopping and Range of Ions in Solids, J. F. Ziegler, Ed. New York: Pergamon, 1985, pp. 109-126.
67. Y. Shih, J. Washburn, E. R. Weber, and R. Gronsky, "The formation of amorphous silicon by light ion damage," in Ion Beam Processes in Advanced Electronic Materials and Device Technology, B. R. Appleton, F. H. Eisen, and T. W. Sigmon, Eds. Pittsburgh, PA: Mater. Res. Soc., 1985, vol. 45, pp. 65-70.
68. - irradiated GaAs investigated by X-ray diffraction methods," Phys. Rev. B, vol. 53, pp. 7823-7835, 1996.