Amorphization mechanisms in AlxGa1-xAs

Materials Research Society Symposium - Proceedings

Volumn 439, Issue , 1997, Pages 197-202

  Lagow, B W ^a   Turkot, B A ^a   Robertson, I M ^a   Rehn, L E ^a   Baldo, P M ^a   Roh, S D ^a   Forbes, D V ^a   Coleman, J J ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; INTERFACES (MATERIALS); ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

HIGH DENSITY CASCADES; SOFTWARE PACKAGE TRIM;

ALUMINUM ALLOYS;

EID: 0030704142     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)