Interface property of Mg-based dual ion implanted p + -ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FETs

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 352-356

  Hara, Naoki ^a   Suehiro, Haruyoshi ^a   Kuroda, Shigeru ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

AlGaAs InGaAs; Interface property; Mg based dual ion implantation; Ohmic property; p channel heterostructure FET

Indexed keywords

ANNEALING; ARGON; CARRIER CONCENTRATION; ELECTRIC RESISTANCE; HETEROJUNCTIONS; INTERFACES (MATERIALS); ION IMPLANTATION; MAGNESIUM; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CONTACT RESISTANCE; SHEET RESISTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0031548535     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80107-9     Document Type: Article

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